著者

Umeda T. Ishitsuka Y. Isoya J. Son N. T. Janzén E. Morishita N. Ohshima T. Itoh H. Gali A.

出版者

American Physical Society

雑誌

Physical review B (ISSN:10980121)

巻号頁・発行日

vol.71, pp.193202, 2005-05

被引用文献数

55

---

Carbon vacancies (VC) are typical intrinsic defects in silicon carbides (SiC) and so far have been observed only in the form of positively charged states in p-type or semi-insulating SiC. Here, we present electron-paramagnetic-resonance (EPR) and photoinduced EPR (photo-EPR) observations of their negatively charged state (V_C^-) in n-type 4H-SiC. This EPR center (called HEI1) is characterized by an electron spin of 1/2 in a Si-Si antibonding state of VC. First-principles calculations confirm that the HEI1 center arises from V_C^- at hexagonal sites. The HEI1 spectrum shows a transition between C1h and C3v symmetries due to a fast reorientation effect reflected in the nature of this defect. The photo-EPR data suggest that V_C^2- is the dominant form of VC when the Fermi level lies 1.1 eV below the conduction band.

著者

Umeda T. Son N. T. Isoya J. Janzén E. Ohshima T. Morishita N. Itoh H. Gali A. Bockstedte M.

出版者

American Physical Society

雑誌

Physical review letters (ISSN:00319007)

巻号頁・発行日

vol.96, pp.145501, 2006-04

被引用文献数

70

---

The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiV_C^-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC.