- 著者
- Umeda T. Son N. T. Isoya J. Janzén E. Ohshima T. Morishita N. Itoh H. Gali A. Bockstedte M.
- 出版者
- American Physical Society
- 雑誌
- Physical review letters (ISSN:00319007)
- 巻号頁・発行日
- vol.96, pp.145501, 2006-04
- 被引用文献数
- 70
The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiV<sub>C</sub><sup>-</sup>) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC.