- 著者
-
Yamamoto Tetsuya
Katayama-Yoshida Hiroshi
- 出版者
- 社団法人応用物理学会
- 雑誌
- Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)
- 巻号頁・発行日
- vol.38, no.2, pp.L166-L169, 1999-02-15
- 被引用文献数
-
28
523
We have investigated the electronic structures of n- or p-type doped ZnO based on ab initio electronic band structure calculations. We find unipolarity in ZnO; n-type doping using Al, Ga or In species decreases the Madelung energy while p-type doping using N species increases the Madelung energy, in addition to causing substantial localization of the N states. Codoping using reactive codopants, Al, Ga or In, enhances the incorporation of N acceptors in p-type codoped ZnO. We find the delocalized states of N for p-type ZnO codoped with N and Al (Ga).