著者

Byun Jeong Soo Kim Chang Reol Rha Kwan Goo Kim Jae Jeong Kim Woo Shik

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.34, no.2, pp.982-986, 1995

被引用文献数

3

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A new technique for the formation of the TiN/TiSi<SUB>2</SUB> bilayer using a TiN<SUB>x</SUB> layer was described. The TiN<SUB>x</SUB> layer was deposited by sputtering in a mixed gas atmosphere of argon and nitrogen, wherein the concentration of nitrogen was controlled to be lower than that required in the formation of stoichiometric TiN. The nitrogen atoms in the Ti matrix relaxed the mechanical stress of the deposited film and also limited the number of Ti atoms available for the interaction with the Si substrate (i.e., silicidation reaction). Upon thermal annealing, TiN<SUB>x</SUB> changed to the bilayer structure of TiN/TiSi<SUB>2</SUB>, in which the thickness of the overlying TiN was so great that only a rather thin TiSi<SUB>2</SUB> was formed between TiN and the Si substrate. Moreover, TiN had the (111) texture, and TiSi<SUB>2</SUB> formed on the (100)Si substrate was found to show well-aligned epitaxial properties with an extremely uniform thickness.