著者

Lee DongKwan Pawlowski Georg

出版者

フォトポリマー学会

雑誌

Journal of Photopolymer Science and Technology (ISSN:09149244)

巻号頁・発行日

vol.15, no.3, pp.427-434, 2002

被引用文献数

7

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A review of the progress in DUV single layer resist technology during the last 10 years is presented and some of the more recent performance achievements are highlighted.<br><b>Once upon a time there was a princess who's afternoon walk was always crossed by an ugly frog, who asked her to give him a kiss. While she long time refused, she finally followed his request with anger and the frog turned into a beatiful prince who married her and they lived a tong and happy life together.<br>Freely adapted after Brothers Grimm 1810</b><br>Particular attention is directed to issues expected to become dominant on the verge from current design rules to the 70nm node, and considered to be of general relevance for photoresist technology, such as pattern collapse, line edge roughness, and defect control. Other areas of discussion include plausible sub 100nm extensions of specific techniques, such as thermal flow, or application of the RELACS process.

著者

Matsunaga Kentaro Oizumi Hiroaki Kaneyama Koji Shiraishi Gousuke Matsumaro Kazuyuki Santillan Julius Joseph Itani Toshiro

出版者

フォトポリマー学会

雑誌

Journal of Photopolymer Science and Technology (ISSN:09149244)

巻号頁・発行日

vol.23, no.5, pp.613-618, 2010

被引用文献数

5

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Extreme ultraviolet (EUV) lithography is the leading candidate for the manufacture of semiconductor devices at the hp 22 nm technology node and beyond. The Selete program covers the evaluation of manufacturability for the EUV lithography process. Then, we have begun a yield analysis of hp 2x nm test chips using the EUV1 (Nikon) full-field exposure tool. However, the resist performance does not yet meet the stringent requirements for resolution limit, sensitivity, and line width roughness. We reported on Selete standard resist 4 (SSR4) at the EUVL Symposium in 2009. Although it has better lithographic performance than SSR3 does, pattern collapse limits the resolution to hp 28 nm. To improve the resolution, we need to optimize the process so as to prevent pattern collapse. An evaluation of SSR4 for the hp 2x nm generation revealed that a thinner resist and the use of a tetrabutylammonium hydroxide (TBAH) solution for the developer were effective in mitigating this problem. Furthermore, the use of an underlayer and an alternative rinse solution increased the exposure latitude by preventing pattern collapse when the resist is overexposed. These optimizations improved the resolution limit to hp 22 nm.

著者

Matsui Shinji Hiroshima Hiroshi Hirai Yoshihiko Nakagawa Masaru

出版者

フォトポリマー学会

雑誌

Journal of Photopolymer Science and Technology (ISSN:09149244)

巻号頁・発行日

vol.27, no.1, pp.61-72, 2014

被引用文献数

5

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The effectiveness of condensable gas, used as ambience, in UV nanoimprint lithography has been demonstrated. Bubble defect problem, which is inherent in UV nanoimprint under non vacuum ambience, can be solved by PFP condensable gas. UV nanoimprint lithography using PFP was validated for 45 nm pattern fabrication under thin residual layer conditions, which are required for UV nanoimprint used as UV nanoimprint lithography. PFP reduces the viscosity and demolding force of UV curable resins. These properties are helpful in increasing the throughput and reliability of UV nanoimprint. PFP occasionally produces large shrinkages, and degrades pattern quality depending on UV curable resin. These drawbacks can be mitigated by selecting UV curable monomers with a low PFP absorption. In the end, we have demonstrated the satisfied LER and LWR values requested in 22 nm node NAND flash memories and 20,000 repeated imprints with a single mold by UV nanoimprint using PFP.