著者

Tawarayama Kazuo Aoyama Hajime Matsunaga Kentaro Shunko Magoshi Yukiyasu Arisawa Taiga Uno

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.49, no.6, pp.06GD01-06GD01-4, 2010-06-25

被引用文献数

1

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EUV1 is a full-field extreme-ultraviolet (EUV) exposure tool that was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in scanning exposure experiments using line-and-space (L&S) patterns, Selete Standard Resist 4 (SSR4), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma=0.8$). Results show that 28 nm L&S patterns are resolved and that the critical dimension (CD) uniformity across a shot is 3.7 nm. Simulations predict that the use of dipole illumination will push the resolution limit down to a half pitch of 20 nm for L&S patterns. Moreover, the results of test site exposures using dipole illumination indicate that the EUV1 is suitable for device fabrication beyond the 22 nm node.

著者

Matsunaga Kentaro Oizumi Hiroaki Kaneyama Koji Shiraishi Gousuke Matsumaro Kazuyuki Santillan Julius Joseph Itani Toshiro

出版者

フォトポリマー学会

雑誌

Journal of Photopolymer Science and Technology (ISSN:09149244)

巻号頁・発行日

vol.23, no.5, pp.613-618, 2010

被引用文献数

7

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Extreme ultraviolet (EUV) lithography is the leading candidate for the manufacture of semiconductor devices at the hp 22 nm technology node and beyond. The Selete program covers the evaluation of manufacturability for the EUV lithography process. Then, we have begun a yield analysis of hp 2x nm test chips using the EUV1 (Nikon) full-field exposure tool. However, the resist performance does not yet meet the stringent requirements for resolution limit, sensitivity, and line width roughness. We reported on Selete standard resist 4 (SSR4) at the EUVL Symposium in 2009. Although it has better lithographic performance than SSR3 does, pattern collapse limits the resolution to hp 28 nm. To improve the resolution, we need to optimize the process so as to prevent pattern collapse. An evaluation of SSR4 for the hp 2x nm generation revealed that a thinner resist and the use of a tetrabutylammonium hydroxide (TBAH) solution for the developer were effective in mitigating this problem. Furthermore, the use of an underlayer and an alternative rinse solution increased the exposure latitude by preventing pattern collapse when the resist is overexposed. These optimizations improved the resolution limit to hp 22 nm.