著者

福井 孝志

出版者

公益社団法人 日本表面科学会

雑誌

表面科学 (ISSN:03885321)

巻号頁・発行日

vol.31, no.1, pp.13-18, 2010-01-10 (Released:2010-01-26)

参考文献数

25

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Recent advance in semiconductor hetero-structure formation technology using crystal growth enabled us to form quantum wires and quantum dots, as well as quantum wells. Here, we review the quantum wire formation technologies which confine an electron or a hole within one-dimension, and their physical properties and device applications. We also introduce recent progresses of semiconductor nanowire fabrication by using crystal growth and their device applications.