著者

青木 勝詔 鈴木 恵友 高梨 久美子 石井 一久 SATYANARAYANA B. S. 尾浦 憲治郎 古田 寛 古田 守 平尾 孝

出版者

一般社団法人 日本真空学会

雑誌

真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN (ISSN:05598516)

巻号頁・発行日

vol.49, no.7, pp.430-432, 2006-07-20

参考文献数

8

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&nbsp;&nbsp;A novel method to make the sharp emitter tips having low threshold voltage of field emission was achieved using nanodiamond particles on conductive amorphous carbon films. A conductive tetrahedral amorphous (ta) carbon film and nano-sized diamond particles with the size of 50 to 200 nm were sequentially deposited by cathordic arc method using a glass substrate at room temperature. Tip structure with the height of 10 to 40 nm was formed by H₂ plasma etching of the diamond particles/ta-C double layer film. The threshold voltage of the field emission from the tip structures formed by the H₂ plasma etching was 3 V/&mu;m that was significantly lower than 10.4 V/&mu;m for the as-deposited diamond particles/ta-C double layer carbon film. This selective dry etching method using the nano-diamond particles could fabricate sharp and high density nano-sized diamond emitters on conductive ta-C films without any photo-masks of lithography processes.<br>