- 著者
-
青木 勝詔
鈴木 恵友
高梨 久美子
石井 一久
SATYANARAYANA B. S.
尾浦 憲治郎
古田 寛
古田 守
平尾 孝
- 出版者
- 一般社団法人 日本真空学会
- 雑誌
- 真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN (ISSN:05598516)
- 巻号頁・発行日
- vol.49, no.7, pp.430-432, 2006-07-20
- 参考文献数
- 8
A novel method to make the sharp emitter tips having low threshold voltage of field emission was achieved using nanodiamond particles on conductive amorphous carbon films. A conductive tetrahedral amorphous (ta) carbon film and nano-sized diamond particles with the size of 50 to 200 nm were sequentially deposited by cathordic arc method using a glass substrate at room temperature. Tip structure with the height of 10 to 40 nm was formed by H<sub>2</sub> plasma etching of the diamond particles/ta-C double layer film. The threshold voltage of the field emission from the tip structures formed by the H<sub>2</sub> plasma etching was 3 V/μm that was significantly lower than 10.4 V/μm for the as-deposited diamond particles/ta-C double layer carbon film. This selective dry etching method using the nano-diamond particles could fabricate sharp and high density nano-sized diamond emitters on conductive ta-C films without any photo-masks of lithography processes.<br>