著者

ド バン タン カチョーンルンルアン パナート 鈴木 恵友

出版者

公益社団法人 精密工学会

雑誌

精密工学会学術講演会講演論文集

巻号頁・発行日

vol.2020, pp.622-623, 2020

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<p>This paper reports development of an optical apparatus for Real-time observation during chemical reactions in Nano-scale process on surface such as CMP (Chemical-Mechanical polishing) and catalysis by applying in evanescent field. Beside using evanescent field to observe Nano-particles in physical aspects, the developed Raman spectroscopy apparatus aims to observe chemical aspects during reactions on processing surface. Changes in Raman scattering spectrum is expected to understand chemical reactions on the processing surface. In this report, the 532 nm wavelength laser source will be used to generate evanescent field. A rotation stage of diffraction grating and a translation stage will used to optimize the Raman spectrum data.</p>

著者

青木 勝詔 鈴木 恵友 高梨 久美子 石井 一久 SATYANARAYANA B. S. 尾浦 憲治郎 古田 寛 古田 守 平尾 孝

出版者

一般社団法人 日本真空学会

雑誌

真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN (ISSN:05598516)

巻号頁・発行日

vol.49, no.7, pp.430-432, 2006-07-20

参考文献数

8

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&nbsp;&nbsp;A novel method to make the sharp emitter tips having low threshold voltage of field emission was achieved using nanodiamond particles on conductive amorphous carbon films. A conductive tetrahedral amorphous (ta) carbon film and nano-sized diamond particles with the size of 50 to 200 nm were sequentially deposited by cathordic arc method using a glass substrate at room temperature. Tip structure with the height of 10 to 40 nm was formed by H₂ plasma etching of the diamond particles/ta-C double layer film. The threshold voltage of the field emission from the tip structures formed by the H₂ plasma etching was 3 V/&mu;m that was significantly lower than 10.4 V/&mu;m for the as-deposited diamond particles/ta-C double layer carbon film. This selective dry etching method using the nano-diamond particles could fabricate sharp and high density nano-sized diamond emitters on conductive ta-C films without any photo-masks of lithography processes.<br>

著者

カチョーンルンルアン パナート 木村 景一 BABU Suryadevara V. 鈴木 恵友

出版者

九州工業大学

雑誌

若手研究(B)

巻号頁・発行日

2013-04-01

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ポリシング加工現象を解析するため,被ポリシング面(被加工領域)にエバネッセント光(近接場光)を発生させ,被加工領域に侵入するナノ微粒子の挙動観察を行なった.独自に開発したポリシング機に搭載できるポリシング現象可視化装置により,ポリシングの現象を再現し,SiO2基板で粒径15~100nm(4H-SiC基板では粒径50nmのシリカ)の粒子の挙動を動的に毎秒100フレームで観察することに成功した.