著者

YANG L. W. WRIGHT P. D. SHEN H. LU Y. BRUSENBACK P. R. KO S. K. CALDERON L. HARTZLER W. D. HAN W. Y. DUTTA M. CHANG W. H.

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.32, no.10, pp.L1400-L1402, 1993-10-01

被引用文献数

1

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Submicron heterojunction bipolar transistors (HBTs) with maximum frequency of oscillation, f_<MAX>, of 91 GHz have been fabricated using a self-aligned technique and a very heavily carbon-doped (10^<20> cm^<-3>) base layer. Since the quenching of photoluminescence (PL) intensity in heavily-doped Cabs is mainly due to nonradiative recombination in the bulk material, while contribution from surface recombination is negligible, the use of a heavily carbon-doped base layer in AlGaAs/GaAs HBTs minimizes the influence of surface recombination in the extrinsic base region. Thus, for HBTs with a heavily doped base layer, the "emitter size effect" (degradation of HBT current gain) is greatly reduced when the emitter width is scaled down to submicron (0.6 μm) dimensions.