- 著者
-
YANG L. W.
WRIGHT P. D.
SHEN H.
LU Y.
BRUSENBACK P. R.
KO S. K.
CALDERON L.
HARTZLER W. D.
HAN W. Y.
DUTTA M.
CHANG W. H.
- 出版者
- 社団法人応用物理学会
- 雑誌
- Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)
- 巻号頁・発行日
- vol.32, no.10, pp.L1400-L1402, 1993-10-01
- 被引用文献数
-
1
Submicron heterojunction bipolar transistors (HBTs) with maximum frequency of oscillation, f_<MAX>, of 91 GHz have been fabricated using a self-aligned technique and a very heavily carbon-doped (10^<20> cm^<-3>) base layer. Since the quenching of photoluminescence (PL) intensity in heavily-doped Cabs is mainly due to nonradiative recombination in the bulk material, while contribution from surface recombination is negligible, the use of a heavily carbon-doped base layer in AlGaAs/GaAs HBTs minimizes the influence of surface recombination in the extrinsic base region. Thus, for HBTs with a heavily doped base layer, the "emitter size effect" (degradation of HBT current gain) is greatly reduced when the emitter width is scaled down to submicron (0.6 μm) dimensions.