著者

青木 昌治 菅 義夫

出版者

公益社団法人 応用物理学会

雑誌

応用物理 (ISSN:03698009)

巻号頁・発行日

vol.29, no.6, pp.363-370, 1960

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For the purpose of obtaining superior thermoelectric materials, purification of Bi, Te and Bi₂Te₃ has been carried out.<br> Bismuth is purified by the method of alkali-treatment and zone melting in removing Cu, Ag and Pb.<br> For the purification of tellurium, vacuum distillation is very efficient to remove Cu, Ag and Pb.<br> Measured thermoelectric power a and resistivity of purified Bi₂Te₃ were &alpha;=235&mu;V&bull;deg^-1, and p=1.16&times;10^-3&Omega;&bull;cm respectively.<br> The influence of addictive impurities on Bi₂Te₃ is examined. Tl, Li, Pb and Cd etc. are p-type and Cu, Ag, Se, Te, halogen and metal-halides etc. are n-type impurities.<br> The thermoelectric properties of PbTe, Sb₂Te₃, Bi₂Te₃-Sb₂Te₃ and Bi₂Te₃-Bi₂Se₃ solid solution are examined. The result shows that the solid solution of isomorphous compounds is suitable for the thermoelectric material.<br> By the use of (Bi-Sb)₂Te₃ <i>p</i>-type element and Bi₂(Te-Se)₃ <i>n</i>-type element thermojunctions, the temperature drop of 71.3 deg was attained with a temperature of hot junction of 30&deg;C.