著者
Yon Guk-Hyon Buh Gyoung Ho Park Tai-su Hong Soo-Jin Shin Yu Gyun Chung U-In Moon Joo-Tae
出版者
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
雑誌
Jpn J Appl Phys (ISSN:00214922)
巻号頁・発行日
vol.45, no.4, pp.2961-2964, 2006-04-30
被引用文献数
2 9

Plasma doping and laser annealing are successfully integrated into the conventional p-metal–oxide–silicon field effect transistor (PMOSFET) process to form ultra shallow junction (USJ). Comparing with the conventional combination of ion implantations and rapid thermal annealing (RTA), junction depth ($X_{\text{J}}$) and sheet resistance ($R_{\text{S}}$) are reduced. Also, significant improvement of the short channel effects without the degradation of on-current is observed.

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こんな論文どうですか? Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub(Yon Guk-Hyonほか),2006 … http://t.co/Go2FhINIGF
こんな論文どうですか? Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub(Yon Guk-Hyonほか),2006 … http://t.co/Go2FhIwFEF

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