Plasma doping and laser annealing are successfully integrated into the conventional p-metal–oxide–silicon field effect transistor (PMOSFET) process to form ultra shallow junction (USJ). Comparing with the conventional combination of ion implantations and rapid thermal annealing (RTA), junction depth ($X_{\text{J}}$) and sheet resistance ($R_{\text{S}}$) are reduced. Also, significant improvement of the short channel effects without the degradation of on-current is observed.