著者

Tawarayama Kazuo Aoyama Hajime Kamo Takashi Magoshi Shunko Tanaka Yuusuke Shirai Seiichiro Tanaka Hiroyuki

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.48, no.6, pp.06FA02-06FA02-6, 2009-06-25

被引用文献数

6

---

The Selete full-field etreme ultraviolet (EUV) exposure tool, the EUV1, was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line and space (L&S) patterns, Selete Standard Resist 03 (SSR3), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma = 0.8$). The results showed that 25 nm L&S patterns were resolved. Dynamic exposure experiments showed the resolution to be 45 nm across the exposure field and the critical dimension (CD) uniformity across a shot to be 7 nm, which is sufficient for an alpha-level lithography tool.

著者

Seo Ji Hyun Kim Hoe Min Choi Eun Young Choi Dae Hyuk Park Jung Hwan Yoo Han Seong Kang Hyun Ju Lee Kum Hee Yoon Seung Soo Kim Young Kwan

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.49, no.8, pp.08JG04-08JG04-4, 2010-08-25

被引用文献数

2

---

We demonstrated that single-layered red phosphorescent organic light-emitting diodes (OLEDs) can have high a efficiency without carrier transport and injection layers. This high efficiency is caused by the direct injection of carriers from electrodes into a dopant, bis(2-phenylquinoline) iridium(III) (acetylacetonate) [Ir(ppy)2(acac)]. This mechanism is proved by analyzing the single-layered devices with various hosts, 4,4$'$-N,N$'$-dicarbazole-biphenyl (CBP), 9-phenyl-3-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-9H-carbazole (LPGH 114), 9-(naphthalen-2-yl)-3-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-9H-carbazole (LPGH 124), and 9-phenyl-3,6-bis[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-9H-carbazole (LPGH 153). Among the devices, the single-layered device with LPGH 153 shows a luminous efficiency, a power efficiency, and a quantum efficiency of 9.3 cd/A, 5.2 lm/W, and 6.2%, respectively. The single-layered device with CBP was compared with a multilayered device with CBP. As a result, the single-layered device shows a reduced operating voltage, an enhanced roll-off efficiency, and a pure emitting color in comparison with the multilayered device owing to the direct injection of carriers into a dopant and the suppression of exciplex formation.

著者

Park Wug-Dong Tanioka Kenkichi

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.48, no.4, pp.04C159-04C159-4, 2009-04-25

被引用文献数

4

---

The thickness dependence of the avalanche characteristics of a tellurium (Te)-doped amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) target is investigated. To improve the quantum efficiency of the a-Se HARP photoconductive target, a Te-doped a-Se photoconductive layer is sandwiched within a-Se HARP target. The avalanche multiplication factor and hole ionization coefficient of the a-Se HARP target are obtained using the result of photocurrent measurement. The multiplication factor in the avalanche mode exponentially increases with increasing electric field by avalanche multiplication phenomena over the threshold field. The quantum efficiency of the 8-μm-thick a-Se HARP target in the avalanche mode is higher than that of the thin HARP target below 2 μm thickness. Also the spectral response, decay lag, and light-transfer characteristics are studied.

著者

Koide Daiichi Yanagisawa Hitoshi Tokumaru Haruki Nakamura Shoichi Ohishi Kiyoshi Inomata Koichi Miyazaki Toshimasa

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.43, no.7, pp.4811-4815, 2004-07-15

参考文献数

8

被引用文献数

1 9

---

We describe the effectiveness of feed-forward control using the zero phase error tracking method (ZPET-FF control) of the tracking servo for high-data-transfer-rate optical disk drives, as we are developing an optical disk system to replace the conventional professional videotape recorder for recording high-definition television signals for news gathering or producing broadcast contents. The optical disk system requires a high-data-transfer-rate of more than 200 Mbps and large recording capacity. Therefore, fast and precise track-following control is indispensable. Here, we compare the characteristics of ZPET-FF control with those of conventional feedback control or repetitive control. Experimental results show that ZPET-FF control is more precise than feedback control, and the residual tracking error level is achieved with a tolerance of 10 nm at a linear velocity of 26 m/s in the experimental setup using a blue-violet laser optical head and high-density media. The feasibility of achieving precise ZPET-FF control at 15000 rpm is also presented.

著者

Tawarayama Kazuo Aoyama Hajime Matsunaga Kentaro Shunko Magoshi Yukiyasu Arisawa Taiga Uno

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.49, no.6, pp.06GD01-06GD01-4, 2010-06-25

被引用文献数

1

---

EUV1 is a full-field extreme-ultraviolet (EUV) exposure tool that was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in scanning exposure experiments using line-and-space (L&S) patterns, Selete Standard Resist 4 (SSR4), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma=0.8$). Results show that 28 nm L&S patterns are resolved and that the critical dimension (CD) uniformity across a shot is 3.7 nm. Simulations predict that the use of dipole illumination will push the resolution limit down to a half pitch of 20 nm for L&S patterns. Moreover, the results of test site exposures using dipole illumination indicate that the EUV1 is suitable for device fabrication beyond the 22 nm node.

著者

Sun Wen-Shing Lin Yan-Nan Chang Jenq-Yang

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.50, no.9, pp.09MA03-09MA03-9, 2011-09-25

被引用文献数

1

---

An optical design is developed for a Blu-ray pickup head with a laser expander that can synchronously detect the linear displacement and two-dimensional angular tilts at the test plane. To improve the signal accuracy of the photo detector, a laser expander is used to transform the shape of the laser beam from elliptical to circular. A quadrant detector as used to detect the relative relationship between the $V_{\text{A}}$, $V_{\text{B}}$, $V_{\text{C}}$, $V_{\text{D}}$ signals, can be used to measure the tilt angle and displacement at the test plane. Measurement detection and analysis is based on one normalized focus error signal (NFES) and two angular signals. The optical efficiency of the Blu-ray pickup head with laser expander is 59.29%. The optical efficiency of the currently used commercial pickup head is only 8.08%. Tolerance analysis is also considered in the performance requirements.

著者

Kang Sung-Mook Lee Jin-Eui Kim Wan-Chin Park No-Cheol Park Young-Pil Cho Eun-Hyoung Sohn Jin-Seung Suh Sung-Dong

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.8, pp.6723-6729, 2006-08-30

被引用文献数

12

---

In this study, a small-form-factor optical pickup (SFFOP), corresponding to the Blu-ray disc (BD) specifications has been developed. The developed SFFOP is composed of an integrated optical pickup and a swing-arm-type actuator. The integrated optical pickup has been developed in the form of an array using wafer-level fabrication technology. The developed SFFOP is composed of the fundamental optics which yields a numerical aperture (NA) of 0.85 and uses a blue laser diode having a short wavelength of 407 nm and a silicon optical bench, which consists of a laser diode, a photodiode and several mounts for the laser diode, an objective lens and mirrors. The micro objective lens is bonded to the lens holder on the SFFOP by an active alignment using a modified Mach–Zehnder interferometer. Also, a static focus error signal was detected to assemble a polarized holographic optical element. Through the measurement of the focus error signal with a swing-arm-type actuator, which was developed for the SFFOP, it is estimated that the developed SFFOP satisfies the BD specifications with the balance of the focus error signal below 10%.

著者

Sohn Jin-Seung Cho Eun-Hyoung Lee MyungBok Kim Hae-Sung Jung MeeSuk Suh Sung-Dong Kim Wan-Chin Park No-Cheol Park Young-Pil

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.2, pp.1144-1151, 2006-02-15

被引用文献数

1 4

---

A microlens of numerical aperture (NA) 0.85 a small-form-factor optical pickup, following the specifications of the Blu-ray disc (BD), was designed, fabricated and evaluated. To avoid difficulties in the fabrication of a high-NA objective lens and to obtain a low chromatic aberration, a new hybrid lens unit was designed to have a refractive lens and a diffractive lens. The micro-plano-aspheric refractive lens was fabricated using glass molding technology, and the diffractive lens was fabricated in a two-dimensional array using the electron beam mastering and consecutive UV embossing process. For the evaluation of the developed lens unit, diffraction efficiency was measured with the proposed diffraction efficiency measurement method, and the wavefront error of the lens unit was evaluated using a modified Mach–Zehnder interferometer. The measured average efficiency of the diffractive lens was approximately 85% and the RMS wavefront error of the lens unit was 0.0376 $\lambda$rms.

著者

Miyata Emi Kouno Hirohiko Kamiyama Daisuke Kamazuka Tomoyuki Mihara Mototsugu Fukuda Mitsunori Matsuta Kensaku Tsunemi Hiroshi Minamisono Tadanori Tomida Hiroshi Miyaguchi Kazuhisa

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.42, no.7, pp.4564-4570, 2003-07-15

参考文献数

18

被引用文献数

5

---

We have investigated the radiation damage effects on a charge-coupled device (CCD) to be used for the Japanese X-ray mission, the monitor of all-sky X-ray image (MAXI), onboard the international space station (ISS). A temperature dependence of the dark current as a function of incremental dose is studied. We found that the protons having energy of ${>}292$ keV seriously increased the dark current of the devices. In order to improve the radiation tolerance of the devices, we have developed various device architectures to minimize the radiation damage in orbit. Among them, nitride oxide enables us to reduce the dark current significantly and therefore we adopted nitride oxide for the flight devices. We also compared the dark current of a device in operation and that out of operation during the proton irradiation. The dark current of the device in operation became twofold that out of operation, and we thus determined that devices would be turned off during the passage of the radiation belt. The temperature dependence of the dark current enables us to determine the electron trap level that generates the dark current. We fitted dark current as a function of temperature by the thoretical models and found that the dark current increase after proton irradiations is caused by, at least, two kinds of electron trap levels. The shallow trap level ($E_{\text{c}}-E_{\text{t}} < 0.2$ eV where $E_{\text{c}}$ and $E_{\text{t}}$ are the energy at the bottom of the conduction band and the energy level of electron trap) might be associated with oxygen which is dominant at the operating temprature of ${>}210$ K. On the other hand, another trap level is located roughly at the center of the silicon bandgap which might be associated with divacancies or P–V traps. We finally investigated the spatial distribution of the low-energy protons in the orbit of the ISS. Their density has a peak around $l \sim 20{{\degree}}$ and $b \sim -55{{\degree}}$ independent of the altitude. The peak value is roughly two orders of magnitude higher than that at the South Atlantic Anomaly.

著者

Takenaka Tadashi Nagata Hajime Hiruma Yuji

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.47, no.5, pp.3787-3801, 2008-05-25

被引用文献数

4 379

---

The dielectric, ferroelectric and piezoelectric properties of perovskite ferroelectric and bismuth layered-structured ferroelectric (BLSF) ceramics are described being superior candidates for lead-free piezoelectric materials to reduce environmental damage. Perovskite-type ceramics seem to be suitable for actuator and high-power applications that require a large piezoelectric constant, $d_{33}$, and a high Curie temperature, $T_{\text{c}}$, or a depolarization temperature, $T_{\text{d}}$ (${>}200$ °C). For BaTiO3-based solid solutions, ($1-x$)BaTiO3–$x$(Bi0.5K0.5)TiO3 (BT–BKT100$x$) ceramics, $T_{\text{c}}$ increases with increasing amount of $x$. The BT–BKT20 + MnCO3 (0.1 wt %) ceramic shows a high $T_{\text{c}}$ greater than 200 °C and an electromechanical coupling factor of $k_{33} =0.35$. In the case of $a$(Bi1/2Na1/2)TiO3–$b$(Bi1/2K1/2)TiO3–$c$BaTiO3 [BNBK (100$a$/100$b$/100$c$)] solid solution ceramics, $d_{33}$ is 191 pC/N for BNBK (85.2/2.8/12). KNbO3 (KN)-based ceramics are also a candidate for lead-free piezoelectrics. In Mn-doped KN ceramics, a higher $k_{33}$ of 0.507 is obtained for KN + MnCO3 (0.1 wt %). On the other hand, BLSF ceramics seem to be excellent candidates as piezoelectric sensors for high temperatures and ceramic resonators with a high mechanical quality factor, $Q_{\text{m}}$, and a low temperature coefficient of resonance frequency, TC-f. The $k_{33}$ value of the donor (Nb)-doped and grain-oriented (HF) Bi4Ti3-xNbxO12 (BITN-$x$) ceramic is 0.39 for $x=0.08$ and is able to keep the same stable value up to 350 °C. Nd(0.01) and V(0.75) co-doped Bi4Ti3O12 ceramics, BNTV$(0.01, 0.75)$, show a relatively low TC-f. Bi3TiTaO9 (BTT)-based solid solution, Srx-1Bi4-xTi2-xTaxO9 [SBTT2($x$)] ($1\leqq x\leqq 2$), displays the high $Q_{\text{m}}$ value ($=13500$) in (p)-mode at $x=1.25$. For resonator applications, (Sr1-xCax)2Bi4Ti5O18 (SCBT) ($0\leqq x\leqq 0.5$) ceramics are suitable.

著者

Mukai Kohki Watanabe Keita Kimura Yuuta

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.49, no.4, pp.04DH07-04DH07-4, 2010-04-25

被引用文献数

3

---

The lattice constant distribution inside a columnar InAs/GaAs quantum dot (QD) and its crystal orientation dependence were evaluated by grazing incidence X-ray diffraction (GIXD) measurement. The QDs were grown by stacking Stranski-krastanow (SK)-type InAs QDs directly in the growth direction with very thin GaAs interval layers. We evaluated the dependence of the in-plane lattice constant on QD height by GIXD measurement using equipment available for laboratories. We found that the lattice constants at the top and bottom of the QDs were almost the same when the height and diameter of the QDs were almost equal. As the number of stacks was increased to grow high QDs, the lattice constant at the QD top became larger in the [1-10] direction than in the [110] direction, but this relationship was reversed at the bottom. We consider that GIXD measurement with compact equipment will contribute to the swift and efficient development of QD devices.

著者

Zheng Hong Reaney Ian M. Muir Duncan Price Tim Iddles David M.

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.44, no.5, pp.3087-3090, 2005-05-15

被引用文献数

14

---

BaLa4Ti4O15 (BLT) is a hexagonal perovskite-related compound with a temperature coefficient of resonant frequency ($\tau_{\text{f}}$) of $-2$ ppm/°C, relative permittivity $(\varepsilon_{\text{r}})\sim 44$ and figure of merit $(Q\cdot f)\sim 44000$ GHz. Ba4Nd9.333Ti18O54 (BNT) has a tungsten-bronze-related structure with $\varepsilon_{\text{r}}\sim 78$, $Q\cdot f\approx 11000$ GHz and $\tau_{\text{f}}$ of $+47$ ppm/°C. The microstructures and microwave dielectric properties of $x$BNT–($1-x$)BLT ($0\leq x\leq 1$) composite ceramics have been studied. X-ray diffraction analysis and scanning electron microscopy revealed that there was limited inter-reaction between the two phases and that samples were composed largely of BNT and BLT, although some deterioration in measured $\varepsilon_{\text{r}}$ with respect to calculated values was observed. The optimum compositions were $x=0.55$ and 0.75 for which $\varepsilon_{\text{r}}\sim 63$, $\tau_{\text{f}}\sim-20$ ppm/°C and $Q\cdot f>10{,}000$ GHz.

著者

Yon Guk-Hyon Buh Gyoung Ho Park Tai-su Hong Soo-Jin Shin Yu Gyun Chung U-In Moon Joo-Tae

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.4, pp.2961-2964, 2006-04-30

被引用文献数

2 9

---

Plasma doping and laser annealing are successfully integrated into the conventional p-metal–oxide–silicon field effect transistor (PMOSFET) process to form ultra shallow junction (USJ). Comparing with the conventional combination of ion implantations and rapid thermal annealing (RTA), junction depth ($X_{\text{J}}$) and sheet resistance ($R_{\text{S}}$) are reduced. Also, significant improvement of the short channel effects without the degradation of on-current is observed.

著者

Park Wug-Dong Tanioka Kenkichi

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.42, no.4, pp.1954-1956, 2003-04-15

被引用文献数

11

---

In this paper, spectral responses of Te-doped a-Se HARP (High-gain Avalanche Rushing amorphous Photoconductor) thin films for a solid state image sensor have been reported. Te concentrations of Te-doped layer in a-Se HARP thin film were 15 wt.% and 26 wt.%, and thicknesses of Te-doped layer were 60 nm, 90 nm, and 120 nm. Spectral responses of Te-doped a-Se HARP films were investigated at bias voltages of 40 V and 60 V. Relative sensitivity and quantum efficiency of a-Se HARP films at 60 V were found to be improved by the increase of Te-doped layer thickness. This improvement is explained by the increased photogeneration efficiency at long wavelength region by the increase of Te-doped layer thickness and avalanche multiplication of the photogenerated carriers at a high electric field.

著者

Mohan Rajneesh Kim Sang-Jae

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.50, no.4, pp.04DJ01-04DJ01-4, 2011-04-25

被引用文献数

4

---

In this paper, the resistive switching effects in ZnO whiskers are reported. The resistive switching properties were studied by current controlled current--voltage ($I$--$V$) sweeps. On increasing the biasing current value, the resistance of the ZnO whiskers switches from high resistance state (HRS) to low resistance state (LRS). Between the HRS and LRS, anomalous resistance fluctuations were observed during the resistive transition. These resistive switching effects were studied for ZnO whiskers of different diameters. It was observed that resistive switching depends on the diameter of the ZnO whisker. As the diameter of a ZnO whisker decreases, the resistance switching increases. The mechanism of the observed resistive switching is also proposed.

著者

Kobune Masafumi Teraoka Kenji Nishioka Hiroshi Yamaguchi Hideshi Honda Koichiro

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.50, no.9, pp.09ND08-09ND08-5, 2011-09-25

被引用文献数

7

---

Perovskite-structured solid solutions with compositions of 0.9963{($1-x$)(Bi_1/2Na_1/2)TiO₃--$x$Ba(Cu_1.1/3Nb_2/3)O₃} + 0.0037MnO₂, with $x = 0{\mbox{--}}0.06$ [abbreviated as ($1-x$)BNT--$x$BCN)], were fabricated by normal sintering, and their structural, and piezo- and ferroelectric properties were investigated in detail. The X-ray diffraction profiles of the ($1-x$)BNT--$x$BCN solid solutions with $x = 0{\mbox{--}}0.06$ suggested that the rhombohedral-tetragonal morphotropic phase boundary (MPB) in this material system is in the compositional region $x = 0.0425{\mbox{--}}0.0460$. The cross-sectional transmission electron microscopy (TEM) images and selected-area electron diffraction (SAED) patterns of the ($1-x$)BNT--$x$BCN samples with $x = 0.0475$ suggested that the present materials have a modulation structure arranged by a double period along the [111] direction. It is shown that the tetragonal BNT--BCN ($x = 0.0475$) solid solution with a composition of 0.9490BNT$\Cdot$0.0473BCN$\Cdot$0.0037MnO₂near the MPB has a piezoelectric coefficient ($d_{33}$), a relative permittivity ($\varepsilon_{33}{}^{\text{T}}/\varepsilon_{0}$), and a remanent polarization ($P_{\text{r}}$) of approximately 1.8, 3.2, and 2.8 times larger, respectively, than those of the BNT solid solution without BCN substitution.