著者

Tawarayama Kazuo Aoyama Hajime Kamo Takashi Magoshi Shunko Tanaka Yuusuke Shirai Seiichiro Tanaka Hiroyuki

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.48, no.6, pp.06FA02-06FA02-6, 2009-06-25

被引用文献数

6

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The Selete full-field etreme ultraviolet (EUV) exposure tool, the EUV1, was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line and space (L&S) patterns, Selete Standard Resist 03 (SSR3), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma = 0.8$). The results showed that 25 nm L&S patterns were resolved. Dynamic exposure experiments showed the resolution to be 45 nm across the exposure field and the critical dimension (CD) uniformity across a shot to be 7 nm, which is sufficient for an alpha-level lithography tool.

著者

Seo Ji Hyun Kim Hoe Min Choi Eun Young Choi Dae Hyuk Park Jung Hwan Yoo Han Seong Kang Hyun Ju Lee Kum Hee Yoon Seung Soo Kim Young Kwan

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.49, no.8, pp.08JG04-08JG04-4, 2010-08-25

被引用文献数

2

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We demonstrated that single-layered red phosphorescent organic light-emitting diodes (OLEDs) can have high a efficiency without carrier transport and injection layers. This high efficiency is caused by the direct injection of carriers from electrodes into a dopant, bis(2-phenylquinoline) iridium(III) (acetylacetonate) [Ir(ppy)2(acac)]. This mechanism is proved by analyzing the single-layered devices with various hosts, 4,4$'$-N,N$'$-dicarbazole-biphenyl (CBP), 9-phenyl-3-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-9H-carbazole (LPGH 114), 9-(naphthalen-2-yl)-3-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-9H-carbazole (LPGH 124), and 9-phenyl-3,6-bis[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-9H-carbazole (LPGH 153). Among the devices, the single-layered device with LPGH 153 shows a luminous efficiency, a power efficiency, and a quantum efficiency of 9.3 cd/A, 5.2 lm/W, and 6.2%, respectively. The single-layered device with CBP was compared with a multilayered device with CBP. As a result, the single-layered device shows a reduced operating voltage, an enhanced roll-off efficiency, and a pure emitting color in comparison with the multilayered device owing to the direct injection of carriers into a dopant and the suppression of exciplex formation.

著者

Park Wug-Dong Tanioka Kenkichi

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.48, no.4, pp.04C159-04C159-4, 2009-04-25

被引用文献数

4

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The thickness dependence of the avalanche characteristics of a tellurium (Te)-doped amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) target is investigated. To improve the quantum efficiency of the a-Se HARP photoconductive target, a Te-doped a-Se photoconductive layer is sandwiched within a-Se HARP target. The avalanche multiplication factor and hole ionization coefficient of the a-Se HARP target are obtained using the result of photocurrent measurement. The multiplication factor in the avalanche mode exponentially increases with increasing electric field by avalanche multiplication phenomena over the threshold field. The quantum efficiency of the 8-μm-thick a-Se HARP target in the avalanche mode is higher than that of the thin HARP target below 2 μm thickness. Also the spectral response, decay lag, and light-transfer characteristics are studied.

著者

Ogai Keiko Kimura Yoshihide Shimizu Ryuichi Ishibashi Kouji Aoyagi Yoshinobu Namba Susumu

出版者

社団法人応用物理学会

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.30, no.11, pp.3272-3276, 1991-11-20

被引用文献数

6

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A novel type of electron blprism was made using a microprocess technique. This electron biprism is composed of several filaments lined in parallel on a silicon nitride membrane. Using this type of multi-biprism, we observed an electric field by electron interferometry and confirmed the potentiality of extending this technique to a local electric field.

著者

Tawarayama Kazuo Aoyama Hajime Matsunaga Kentaro Shunko Magoshi Yukiyasu Arisawa Taiga Uno

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.49, no.6, pp.06GD01-06GD01-4, 2010-06-25

被引用文献数

1

---

EUV1 is a full-field extreme-ultraviolet (EUV) exposure tool that was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in scanning exposure experiments using line-and-space (L&S) patterns, Selete Standard Resist 4 (SSR4), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma=0.8$). Results show that 28 nm L&S patterns are resolved and that the critical dimension (CD) uniformity across a shot is 3.7 nm. Simulations predict that the use of dipole illumination will push the resolution limit down to a half pitch of 20 nm for L&S patterns. Moreover, the results of test site exposures using dipole illumination indicate that the EUV1 is suitable for device fabrication beyond the 22 nm node.

著者

Yamaguchi Atsushi Kodama Yasuhiro Matsuo Hiroto Ohno Minoru Osugi Satomi Maeno Yoshiaki Higuchi Masahiro

出版者

INSTITUTE OF PURE AND APPLIED PHYSICS

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.8, pp.6326-6327, 2006-08-15

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Polylactic acid (PLA) is a biomass material made of starch. Compact disc recordable (CD-R) discs with a PLA substrate were prepared and their properties were measured. Although the glass transition point of PLA is lower than that of polycarbonate (PC), the PLA substrate is usable for CD-R discs. It was confirmed that the substrate is usable for recordable optical discs at temperatures under 50 °C.

著者

Yamaguchi Atsushi Hibino Katsutoshi Suzuki Yoshihisa Terasaki Hitoshi Ichiura Shuichi

出版者

INSTITUTE OF PURE AND APPLIED PHYSICS

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.2, pp.1129-1130, 2006-02-15

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A laser beam axis compensator was fabricated for an optical pickup unit with blue and red lasers. The device consisted of multiwavelength wave plates and a double-refractive-index material. The wave plates were realized by a photonic crystal technique. By measuring the beam profiles of the blue and red lasers, the device was confirmed to function as a laser axis compensator. Under 110 μm laser beam axis shift setting conditions, readout signal patterns from an optical disc were measured.

著者

Sun Wen-Shing Lin Yan-Nan Chang Jenq-Yang

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.50, no.9, pp.09MA03-09MA03-9, 2011-09-25

被引用文献数

1

---

An optical design is developed for a Blu-ray pickup head with a laser expander that can synchronously detect the linear displacement and two-dimensional angular tilts at the test plane. To improve the signal accuracy of the photo detector, a laser expander is used to transform the shape of the laser beam from elliptical to circular. A quadrant detector as used to detect the relative relationship between the $V_{\text{A}}$, $V_{\text{B}}$, $V_{\text{C}}$, $V_{\text{D}}$ signals, can be used to measure the tilt angle and displacement at the test plane. Measurement detection and analysis is based on one normalized focus error signal (NFES) and two angular signals. The optical efficiency of the Blu-ray pickup head with laser expander is 59.29%. The optical efficiency of the currently used commercial pickup head is only 8.08%. Tolerance analysis is also considered in the performance requirements.

著者

Kang Sung-Mook Lee Jin-Eui Kim Wan-Chin Park No-Cheol Park Young-Pil Cho Eun-Hyoung Sohn Jin-Seung Suh Sung-Dong

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.8, pp.6723-6729, 2006-08-30

被引用文献数

12

---

In this study, a small-form-factor optical pickup (SFFOP), corresponding to the Blu-ray disc (BD) specifications has been developed. The developed SFFOP is composed of an integrated optical pickup and a swing-arm-type actuator. The integrated optical pickup has been developed in the form of an array using wafer-level fabrication technology. The developed SFFOP is composed of the fundamental optics which yields a numerical aperture (NA) of 0.85 and uses a blue laser diode having a short wavelength of 407 nm and a silicon optical bench, which consists of a laser diode, a photodiode and several mounts for the laser diode, an objective lens and mirrors. The micro objective lens is bonded to the lens holder on the SFFOP by an active alignment using a modified Mach–Zehnder interferometer. Also, a static focus error signal was detected to assemble a polarized holographic optical element. Through the measurement of the focus error signal with a swing-arm-type actuator, which was developed for the SFFOP, it is estimated that the developed SFFOP satisfies the BD specifications with the balance of the focus error signal below 10%.

著者

Sohn Jin-Seung Cho Eun-Hyoung Lee MyungBok Kim Hae-Sung Jung MeeSuk Suh Sung-Dong Kim Wan-Chin Park No-Cheol Park Young-Pil

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.2, pp.1144-1151, 2006-02-15

被引用文献数

1 4

---

A microlens of numerical aperture (NA) 0.85 a small-form-factor optical pickup, following the specifications of the Blu-ray disc (BD), was designed, fabricated and evaluated. To avoid difficulties in the fabrication of a high-NA objective lens and to obtain a low chromatic aberration, a new hybrid lens unit was designed to have a refractive lens and a diffractive lens. The micro-plano-aspheric refractive lens was fabricated using glass molding technology, and the diffractive lens was fabricated in a two-dimensional array using the electron beam mastering and consecutive UV embossing process. For the evaluation of the developed lens unit, diffraction efficiency was measured with the proposed diffraction efficiency measurement method, and the wavefront error of the lens unit was evaluated using a modified Mach–Zehnder interferometer. The measured average efficiency of the diffractive lens was approximately 85% and the RMS wavefront error of the lens unit was 0.0376 $\lambda$rms.

著者

Fillard Jp Montgomery P. Gall P. Asgarinia M. Bonnafe J.

出版者

社団法人応用物理学会

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.27, no.3, pp.384-388, 1988-03-20

被引用文献数

5

---

Careful measurements of the changes induced by photoquenching in the infra red transmission image of GaAs wafers at Liquid Nitrogen temperature shows an important enhancement of the mean light level and disappearance of the usual fourfold feature; but it also shows that the contrast of the pattern (cell structure) is not affected at all. The contribution of EL2 centres to the image is questioned; it is deduced from these results that photoquenchable EL$^{0}2$ centres are slightly more abundant in the cells than in the walls. In large cell materials an intermediate zone is found surrounding the cells and containing higher EL$^{0}2$ densities. This sheds new light on the role of the dislocations; these results are discussed and compared with etching and luminescence images.

著者

Takenaka Tadashi Nagata Hajime Hiruma Yuji

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.47, no.5, pp.3787-3801, 2008-05-25

被引用文献数

4 379

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The dielectric, ferroelectric and piezoelectric properties of perovskite ferroelectric and bismuth layered-structured ferroelectric (BLSF) ceramics are described being superior candidates for lead-free piezoelectric materials to reduce environmental damage. Perovskite-type ceramics seem to be suitable for actuator and high-power applications that require a large piezoelectric constant, $d_{33}$, and a high Curie temperature, $T_{\text{c}}$, or a depolarization temperature, $T_{\text{d}}$ (${>}200$ °C). For BaTiO3-based solid solutions, ($1-x$)BaTiO3–$x$(Bi0.5K0.5)TiO3 (BT–BKT100$x$) ceramics, $T_{\text{c}}$ increases with increasing amount of $x$. The BT–BKT20 + MnCO3 (0.1 wt %) ceramic shows a high $T_{\text{c}}$ greater than 200 °C and an electromechanical coupling factor of $k_{33} =0.35$. In the case of $a$(Bi1/2Na1/2)TiO3–$b$(Bi1/2K1/2)TiO3–$c$BaTiO3 [BNBK (100$a$/100$b$/100$c$)] solid solution ceramics, $d_{33}$ is 191 pC/N for BNBK (85.2/2.8/12). KNbO3 (KN)-based ceramics are also a candidate for lead-free piezoelectrics. In Mn-doped KN ceramics, a higher $k_{33}$ of 0.507 is obtained for KN + MnCO3 (0.1 wt %). On the other hand, BLSF ceramics seem to be excellent candidates as piezoelectric sensors for high temperatures and ceramic resonators with a high mechanical quality factor, $Q_{\text{m}}$, and a low temperature coefficient of resonance frequency, TC-f. The $k_{33}$ value of the donor (Nb)-doped and grain-oriented (HF) Bi4Ti3-xNbxO12 (BITN-$x$) ceramic is 0.39 for $x=0.08$ and is able to keep the same stable value up to 350 °C. Nd(0.01) and V(0.75) co-doped Bi4Ti3O12 ceramics, BNTV$(0.01, 0.75)$, show a relatively low TC-f. Bi3TiTaO9 (BTT)-based solid solution, Srx-1Bi4-xTi2-xTaxO9 [SBTT2($x$)] ($1\leqq x\leqq 2$), displays the high $Q_{\text{m}}$ value ($=13500$) in (p)-mode at $x=1.25$. For resonator applications, (Sr1-xCax)2Bi4Ti5O18 (SCBT) ($0\leqq x\leqq 0.5$) ceramics are suitable.

著者

Mukai Kohki Watanabe Keita Kimura Yuuta

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.49, no.4, pp.04DH07-04DH07-4, 2010-04-25

被引用文献数

3

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The lattice constant distribution inside a columnar InAs/GaAs quantum dot (QD) and its crystal orientation dependence were evaluated by grazing incidence X-ray diffraction (GIXD) measurement. The QDs were grown by stacking Stranski-krastanow (SK)-type InAs QDs directly in the growth direction with very thin GaAs interval layers. We evaluated the dependence of the in-plane lattice constant on QD height by GIXD measurement using equipment available for laboratories. We found that the lattice constants at the top and bottom of the QDs were almost the same when the height and diameter of the QDs were almost equal. As the number of stacks was increased to grow high QDs, the lattice constant at the QD top became larger in the [1-10] direction than in the [110] direction, but this relationship was reversed at the bottom. We consider that GIXD measurement with compact equipment will contribute to the swift and efficient development of QD devices.

著者

Sako Teiyu Kimura Yasuyuki Hayakawa Reinosuke Okabe Nobuhiro Suzuki Yoshiichi

出版者

INSTITUTE OF PURE AND APPLIED PHYSICS

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.35, no.2, pp.679-682, 1996-02-15

被引用文献数

4

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The Smectic-A (SmA) phases of the antiferroelectric liquid crystals (R)-MHPOBC, (R)-MHPOCBC and slightly racemized MHPOBC (R:S=17:3) have been studied by means of simultaneous measurements of the electric displacement and the tilt angle induced by the electric field. The SmA–SmCα* phase transition was observed in (R)-MHPOBC and (R)-MHPOCBC, while a phase transition similar to the SmA–SmC* one was observed in slightly racemized MHPOBC. In both cases, the Landau-type phenomenological theory explains well the critical behavior in the SmA phase, and the coefficients related to the theory can be determined.

著者

Yon Guk-Hyon Buh Gyoung Ho Park Tai-su Hong Soo-Jin Shin Yu Gyun Chung U-In Moon Joo-Tae

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.45, no.4, pp.2961-2964, 2006-04-30

被引用文献数

2 9

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Plasma doping and laser annealing are successfully integrated into the conventional p-metal–oxide–silicon field effect transistor (PMOSFET) process to form ultra shallow junction (USJ). Comparing with the conventional combination of ion implantations and rapid thermal annealing (RTA), junction depth ($X_{\text{J}}$) and sheet resistance ($R_{\text{S}}$) are reduced. Also, significant improvement of the short channel effects without the degradation of on-current is observed.

著者

Mohan Rajneesh Kim Sang-Jae

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.50, no.4, pp.04DJ01-04DJ01-4, 2011-04-25

被引用文献数

4

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In this paper, the resistive switching effects in ZnO whiskers are reported. The resistive switching properties were studied by current controlled current--voltage ($I$--$V$) sweeps. On increasing the biasing current value, the resistance of the ZnO whiskers switches from high resistance state (HRS) to low resistance state (LRS). Between the HRS and LRS, anomalous resistance fluctuations were observed during the resistive transition. These resistive switching effects were studied for ZnO whiskers of different diameters. It was observed that resistive switching depends on the diameter of the ZnO whisker. As the diameter of a ZnO whisker decreases, the resistance switching increases. The mechanism of the observed resistive switching is also proposed.

著者

Kobune Masafumi Teraoka Kenji Nishioka Hiroshi Yamaguchi Hideshi Honda Koichiro

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.50, no.9, pp.09ND08-09ND08-5, 2011-09-25

被引用文献数

7

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Perovskite-structured solid solutions with compositions of 0.9963{($1-x$)(Bi_1/2Na_1/2)TiO₃--$x$Ba(Cu_1.1/3Nb_2/3)O₃} + 0.0037MnO₂, with $x = 0{\mbox{--}}0.06$ [abbreviated as ($1-x$)BNT--$x$BCN)], were fabricated by normal sintering, and their structural, and piezo- and ferroelectric properties were investigated in detail. The X-ray diffraction profiles of the ($1-x$)BNT--$x$BCN solid solutions with $x = 0{\mbox{--}}0.06$ suggested that the rhombohedral-tetragonal morphotropic phase boundary (MPB) in this material system is in the compositional region $x = 0.0425{\mbox{--}}0.0460$. The cross-sectional transmission electron microscopy (TEM) images and selected-area electron diffraction (SAED) patterns of the ($1-x$)BNT--$x$BCN samples with $x = 0.0475$ suggested that the present materials have a modulation structure arranged by a double period along the [111] direction. It is shown that the tetragonal BNT--BCN ($x = 0.0475$) solid solution with a composition of 0.9490BNT$\Cdot$0.0473BCN$\Cdot$0.0037MnO₂near the MPB has a piezoelectric coefficient ($d_{33}$), a relative permittivity ($\varepsilon_{33}{}^{\text{T}}/\varepsilon_{0}$), and a remanent polarization ($P_{\text{r}}$) of approximately 1.8, 3.2, and 2.8 times larger, respectively, than those of the BNT solid solution without BCN substitution.

著者

Nakatani Noriyuki Hara Naoyuki

出版者

社団法人応用物理学会

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.32, no.7, pp.3204-3208, 1993-07-20

被引用文献数

12

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Single crystals of ferroelectric triglycine sulfate (TGS) have been grown from aqueous solution containing 10 mol% of sarcosine. The crystal, referred to as SarTGS, shows a quite different habit from undoped TGS. The concentration of sarcosine incorporated in the crystal is, at most, 1/500 of the solution concentration. Although sarcosine is not chiral, an internal bias field $E_{\text{b}}$ of 40–140 kV/m is produced. The direction and intensity of $E_{\text{b}}$, as well as the domain structure, vary according to the crystal growth sector. The directions of $E_{\text{b}}$ in matching sectors in both $b$ sides of the seed crystal are opposite to each other. In the sectors where the growing surface is parallel to the $b$-axis, no bias field is produced. The cause of such a feature of $E_{\text{b}}$ in the SarTGS crystal is discussed in terms of symmetry considerations.