1 0 0 0 SiC表面上のステップ構造と吸着原子の拡散過程
- 著者
- 制野 かおり
- 出版者
- 公益社団法人 日本表面真空学会
- 雑誌
- 表面と真空 (ISSN:24335835)
- 巻号頁・発行日
- vol.66, no.4, pp.239-244, 2023-04-10 (Released:2023-04-10)
- 参考文献数
- 42
Recent first-principles studies on step structures and adatom diffusion on SiC(0001) surfaces are reviewed. SiC is a promising material for next-generation power electronics, and SiC power devices are already on the market. The obtained formation energies of all the possible atomic steps provide a definite identification of the most relevant atomic step for two vicinal directions inclined toward either <1100> or <1120> direction on SiC(0001) surfaces. Relations between the energetics of surface steps and macroscopic step morphology are discussed. Diffusion mechanism for Si, C, and H adatoms which are three important chemical elements of gas sources of chemical vapor deposition (CVD) for SiC is revealed both on the surface terraces and near the surface steps.
1 0 0 0 OA 女性研究者の海外でのライフワークバランス@ドイツ
- 著者
- 制野 かおり
- 出版者
- 公益社団法人 日本表面科学会
- 雑誌
- 表面科学 (ISSN:03885321)
- 巻号頁・発行日
- vol.38, no.4, pp.197-198, 2017-04-10 (Released:2017-04-22)
- 参考文献数
- 1