著者

栗田 一成 門野 武 奥山 亮輔 廣瀬 諒 柾田 亜由美 奥田 秀彦 古賀 祥泰

出版者

公益社団法人 日本表面科学会

雑誌

表面科学 (ISSN:03885321)

巻号頁・発行日

vol.37, no.3, pp.104-109, 2016-03-10 (Released:2016-03-23)

参考文献数

35

被引用文献数

7 9

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In recent years, CMOS image sensor has been widely used for ubiquitous devices such as smart-phone and tablets. However, CMOS image sensors performance are dramatically influenced by process induced defects such as metallic impurities related deep level defects in the space-charge region. Thus, it is extremely important to study metallic impurities influence on CMOS image sensor performance and to develop effectiveness metallic impurities gettering technique. In this article, we introduce our new proximity gettering technique for advanced CMOS image sensor by using a carbon cluster ion implantation technique. In addition, we demonstrate that the carbon cluster ion implanted silicon wafer has high gettering capability of oxygen, hydrogen and metallic impurity after CMOS simulation heat treatment.