著者
本多 史明 細野 智史 末重 良宝 藤野 真久 須賀 唯知 一木 正聡 伊藤 寿浩
出版者
一般社団法人 電気学会
雑誌
電気学会論文誌E(センサ・マイクロマシン部門誌) (ISSN:13418939)
巻号頁・発行日
vol.133, no.11, pp.B320-B325, 2013-11-01 (Released:2013-11-01)
参考文献数
9

PZT (Pb(Zrx,Ti1-x)O3) thin film capacitors using Nano-transfer method has been developed for the fabrication technology of smaller capacitors. The adhesion strength of Pt to SiO2 was shown to be important among process factors. The adhesion force was shown to be originated from the material diffusion in the crystallization process mainly by the observation of TEM and XPS analysis. In this paper, diffusion of ingredients of PZT which is supposed to be one of the factors of the variation was investigated. It was confirmed that diffusion of Pb certainly occurs and this diffusion reinforces the adhesion strength in accordance with the Pt thickness. It is concluded that the diffusion is surely one of the factors of the variation of the adhesion strength.