著者

臼田 宏治 木村 健次郎 小林 圭 山田 啓文

出版者

公益社団法人 日本表面科学会

雑誌

表面科学 (ISSN:03885321)

巻号頁・発行日

vol.28, no.2, pp.84-90, 2007-02-10 (Released:2007-03-20)

参考文献数

16

被引用文献数

1 1

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We introduce scanning capacitance force microscopy (SCFM), a newly developed dopant profiling method, and a 3-dimensional wiring procedure enabling evaluation of dopant profile under metal-oxide-semiconductor field-effect-transistor (MOSFET) operation. The principle of the SCFM is based on measurement of an electrostatic force (ESF) that is induced by bias voltage of angular frequency ω between a tip and a sample. The focused ion beam (FIB) technique was employed to evaluate dopant profile for the cross-section of MOSFET devices under the device operation. Local etching, deposition, and formation of small wiring for the specified MOSFET were successively carried out with the FIB, and the variation of dopant profiling was clearly shown with applying voltage to the MOSFET. These techniques are expected to be utilized for the failure analysis and the development of next-generation devices.