著者

豊田 陽平 大山 高裕 亀井 大輔 宮谷 太朗 三浦 隆治 遠藤 明 久保 百司 宮本 明

出版者

公益社団法人 化学工学会

雑誌

化学工学会 研究発表講演要旨集

巻号頁・発行日

vol.2003, pp.1023, 2003

著者

小島 友和 横井 貴樹 豊田 陽平 脇田 紘一

出版者

一般社団法人 電気学会

雑誌

電気学会論文誌. C (ISSN:03854221)

巻号頁・発行日

vol.121, no.12, pp.1796-1800, 2001

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A new electroabsorption modulator operating at a parallel electric-field to the quantum wells is proposed and its modulation characteristics have been calculated. Transverse p-i-n structure on semi-insulating substrate enables us to apply a parallel field for MQW layers and results in low device capacitance and high-speed operation. The exciton resonance can easily broaden and disappear at field-intensity of 10⁴ V/cm, one tenth of the perpendicular field previously used. A 3-dB bandwidth and operation voltage required for 20 dB extinction ratio are estimated to be over 250 GHz and less than 1 V, respectively, with transmission loss of less than 3 dB. High allowability of high incidental optical power and negative chirp operation are also discussed for this structure.