著者
難波 義捷
出版者
公益社団法人 応用物理学会
雑誌
応用物理 (ISSN:03698009)
巻号頁・発行日
vol.40, no.6, pp.639-644, 1971-06-10 (Released:2009-02-09)
参考文献数
10
被引用文献数
1

The cross-sectional structure of evaporated Bi films has been investigated electron-microscopically by means of the replica technique. Films were prepared changing the evaporation conditions : substrate temperature, residual gas pressure and deposition rate. The influence of deposition rate appears most conspicuously at the thickness where the film becomes continuous : the structure of the film surface is essentially determined at this stage. The influence of deposition rate becomes more and more remarkable as the substrate temperature is elevated. If the residual gas pressure is high, the colmnar growth, as was observed with Al films, takes place in Bi films, also.