著者
Hiroki TAKAI Shunji MATSUBARA Yukari MINAMI-OGAWA Satoshi HIRAI Eiji SHIKATA Kenji YAGI Naoki OYAMA Yoshiki YAGITA Masaaki UNO
出版者
The Japan Neurosurgical Society
雑誌
Neurologia medico-chirurgica (ISSN:04708105)
巻号頁・発行日
pp.2023-0034, (Released:2023-07-25)
参考文献数
16
被引用文献数
1

The morphology of the internal carotid artery (ICA) bifurcation is increasingly being recognized as the cause of atherosclerosis and vulnerable plaque leading to cerebral infarction. In this study, we investigated the relationship between carotid bifurcation angle and carotid plaque volume evaluated using black blood magnetic resonance imaging (BB-MRI). Among the 90 patients who underwent revascularization for atherosclerotic symptomatic carotid stenosis between April 2016 and October 2022 using BB-MRI, carotid plaque was evaluated in 57 patients. Relative overall signal intensity (roSI) was defined as the signal intensity of the plaque on T1-weighted images relative to the signal intensity of the sternocleidomastoid muscle in the same slice as the common carotid bifurcation. Regions showing roSI ≥ 1.0 were defined as plaque, and the plaque volume and relative plaque volume were measured from roSI ≥1.0 to ≥2.0 in 0.1 increments. We calculated the angles between the common carotid artery (CCA) and the ICA and between the CCA and the external carotid artery (ECA) on magnetic resonance angiography. We classified two groups according to carotid bifurcation angles based on the ICA angle: Group A = <35° and Group B = ≥35°. Compared with Group A (n = 42), Group B (n = 15) showed a greater relative plaque volume between roSI ≥ 1.3 and roSI ≥ 1.5. A significant correlation was identified between relative plaque volume with roSI ≥ 1.4 and ICA angle (p = 0.049). Vulnerable plaque was significantly more frequent in the group with an ICA angle of ≥35. Moreover, the ICA angle was significantly greater in patients with a roSI of ≥1.4.
著者
Masaaki UNO Kenji YAGI Hiroyuki TAKAI Naoki OYAMA Yoshiki YAGITA Keita HAZAMA Hideki NAKATSUKA Shunji MATSUBARA
出版者
The Japan Neurosurgical Society
雑誌
Neurologia medico-chirurgica (ISSN:04708105)
巻号頁・発行日
vol.61, no.2, pp.124-133, 2021 (Released:2021-02-15)
参考文献数
35
被引用文献数
4

We compared the rate of selective shunt and pattern of monitoring change between single and dual monitoring in patients undergoing carotid endarterectomy (CEA). A total of 121 patients underwent 128 consecutive CEA procedures. Excluding five procedures using internal shunts in a premeditated manner, we classified patients according to the monitoring: Group A (n = 72), patients with single somatosensory evoked potential (SSEP) monitoring; and Group B (n = 51), patients with dual SSEP and motor evoked potential (MEP). Among the 123 CEAs, an internal shunt was inserted in 12 procedures (9.8%) due to significant changes in monitoring (Group A 5.6%, Group B 15.7%, p = 0.07). The rate of shunt use was significantly higher in patients with the absence of contralateral proximal anterior cerebral artery (A1) on magnetic resonance angiography (MRA) than in patients with other types of MRA (p <0.001). Significant monitor changes were seen in 16 (12.5%) in both groups. In four of nine patients in Group B, SSEP and MEP changes were synchronized, and in the remaining five patients, a time lag was evident between SSEP and MEP changes. In conclusion, the rate of internal shunt use tended to be more frequent in patients with dual monitoring than in patients with single SSEP monitoring, but the difference was not significant. Contralateral A1 absence may predict the need for a shunt and care should be taken to monitor changes throughout the entire CEA procedure. Use of dual monitoring can capture ischemic changes due to the complementary relationship, and may reduce the rate of false-negative monitor changes during CEA.
著者
Naoki OYAMA Sho KANEKO Katsuaki MOMIYAMA Fumihiko HIROSE
出版者
The Institute of Electronics, Information and Communication Engineers
雑誌
IEICE TRANSACTIONS on Electronics (ISSN:09168516)
巻号頁・発行日
vol.E94-C, no.12, pp.1838-1844, 2011-12-01

Current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of P3HT/n--silicon heterojunction diodes were investigated to clarify the carrier conduction mechanism at the organic/inorganic heterojunction. The J-V characteristics of the P3HT/n--Si junctions can be explained by a Schottky diode model with an interfacial layer. Diode parameters such as Schottky barrier height and ideality factor were estimated to be 0.78 eV and 3.2, respectively. The C-V analysis suggests that the depletion layer appears in the n--Si layer with a thickness of 1.2 µm from the junction with zero bias and the diffusion potential was estimated at 0.40 eV at the open-circuit condition. The present heterojunction allows a photovoltaic operation with power conversion efficiencies up to 0.38% with a simulated solar light exposure of 100 mW/cm2. The forward bias current was enhanced by coating the Si surface with a SiC layer, where the ideality factor was improved to be the level of 1.451.50.