著者

You D. Fukuzawa H. Sakakibara Y. Takanashi T. Ito Y. Maliyar G. G. Motomura K. Nagaya K. Nishiyama T. Asa K. Sato Y. Saito N. Oura M. Schöffler M. Kastirke G. Hergenhahn U. Stumpf V. Gokhberg K. Kuleff A. I. Cederbaum L. S. Ueda K

出版者

Springer Nature

雑誌

Nature Communications (ISSN:20411723)

巻号頁・発行日

vol.8, 2017-01-30

被引用文献数

24

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安定なイオンが周囲の原子の電子をキャッチ&リリース! --X線照射による生体分子損傷の機構解明に貢献--. 京都大学プレスリリース. 2017-02-01.

著者

Nagaya K Iablonskyi D Golubev N. V Matsunami K Fukuzawa H Motomura K Nishiyama T Sakai T Tachibana T Mondal S Wada S Prince K. C Callegari C Miron C Saito N Yabashi M Demekhin Ph. V Cederbaum L. S Kuleff A. I Yao M Ueda K

出版者

Springer Nature

雑誌

Nature communications (ISSN:20411723)

巻号頁・発行日

vol.7, pp.13477, 2016-12-05

被引用文献数

30

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原子の集団が数珠つなぎに電子を放出する! : 極紫外自由電子レーザーで誘起される新現象解明. 京都大学プレスリリース. 2016-12-12.

著者

Baba M. Toh K. Toko K. Hara K.O. Usami N. Saito N. Yoshizawa N. Suemasu T.

出版者

Elsevier B.V.

雑誌

Journal of crystal growth (ISSN:00220248)

巻号頁・発行日

vol.378, pp.193-197, 2013-09

被引用文献数

5 1

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BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). To enlarge the grain size of BaSi2, the Ba deposition rate and duration were varied from 0.25 to 1.0 nm/min and from 5 to 120 min during RDE, respectively. The effect of post-annealing was also investigated at 760 °C for 10 min. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly increased up to approximately 4.0 μm, which is much larger than 0.2 μm, reported previously.