著者

Usui Akira Sunakawa Haruo Sakai Akira YAMAGUCHI A. Atsushi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.36, no.7, pp.L899-L902, 1997-07-15

被引用文献数

113 792

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Thick GaN layers were grown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of laser diodes or light emitting diodes. HVPE is very useful for thick layer growth since the growth rate can reach from several ten up to one hundred micron per hour. In this experiment, the growth began as selective growth through openings formed in a SiO_2 mask. Facets consisting of {1101} planes were formed in the early stage and a continuous film developed from the coalescence of these facets on the SiO_2 mask. As a result, GaN layers with a dislocation density as low as 6 × 10^7 cm^-2 were grown on 2-inch-diameter sapphire wafers. These GaN layers were crack-free and had mirror-like surface.