著者

嶋宮 民安 北間 敏弘 長田 誠 相部 洋一 小松原 修 野副 晋 篠原 正典 碓氷 章 寺田 信幸 毛利 元彦 Shimamiya Tamiyasu Kitama Toshihiro Osada Makoto Aibe Yoichi Komatsubara Osamu Nozoe Susumu Shinohara Masanori Usui Akira Terada Nobuyuki Mori Motohiko

出版者

宇宙航空研究開発機構宇宙科学研究本部

雑誌

宇宙利用シンポジウム 第24回 平成19年度 = Space Utilization Research: Proceedings of the Twenty-fourth Space Utilization Symposium

巻号頁・発行日

pp.351-352, 2008-03

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Living in space must entail life in a cramped confined space, as well as monotonous sounds, smells, food and scenery. There are still few studies on human health in long-term closed habitation. We have investigated changes in the psycho-physiological status of humans in a series of closed habitations with re-circulated air, water and waste products. In this report, we describe a closed habitation experiment conducted at the Institute for Environmental Sciences and the outcomes obtained through discussion in our working group.

著者

Usui Akira Sunakawa Haruo Sakai Akira YAMAGUCHI A. Atsushi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.36, no.7, pp.L899-L902, 1997-07-15

被引用文献数

113 792

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Thick GaN layers were grown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of laser diodes or light emitting diodes. HVPE is very useful for thick layer growth since the growth rate can reach from several ten up to one hundred micron per hour. In this experiment, the growth began as selective growth through openings formed in a SiO_2 mask. Facets consisting of {1101} planes were formed in the early stage and a continuous film developed from the coalescence of these facets on the SiO_2 mask. As a result, GaN layers with a dislocation density as low as 6 × 10^7 cm^-2 were grown on 2-inch-diameter sapphire wafers. These GaN layers were crack-free and had mirror-like surface.