- 著者
-
Usui Akira
Sunakawa Haruo
Sakai Akira
YAMAGUCHI A. Atsushi
- 出版者
- 社団法人応用物理学会
- 雑誌
- Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)
- 巻号頁・発行日
- vol.36, no.7, pp.L899-L902, 1997-07-15
- 被引用文献数
-
113
792
Thick GaN layers were grown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of laser diodes or light emitting diodes. HVPE is very useful for thick layer growth since the growth rate can reach from several ten up to one hundred micron per hour. In this experiment, the growth began as selective growth through openings formed in a SiO_2 mask. Facets consisting of {1101} planes were formed in the early stage and a continuous film developed from the coalescence of these facets on the SiO_2 mask. As a result, GaN layers with a dislocation density as low as 6 × 10^7 cm^-2 were grown on 2-inch-diameter sapphire wafers. These GaN layers were crack-free and had mirror-like surface.