著者

小幡 孝太郎 杉岡 幸次 甲野 竜哉 高井 裕司 豊田 浩一 緑川 克美

出版者

一般社団法人 電気学会

雑誌

電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society (ISSN:03854221)

巻号頁・発行日

vol.123, no.2, pp.241-245, 2003-02-01

参考文献数

13

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Dynamics of ablation of fused silica by multiwavelength excitation process using F₂ and KrF excimer laser has been investigated by energy analyzed mass spectrometry of ablated species. The number of generated Si⁺ ion by multiwavelength excitation process corresponds to that by single-F₂ laser ablation and to approximately 2.1 times higher than that by single-KrF excimer laser ablation. In addition, kinetic energy distribution of Si⁺ ablated by multiwavelength excitation process shows almost same as that by single-F₂ laser ablation. We regard that absorption of KrF excimer laser by excited state generated by F₂ laser (excited-state absorption: ESA) causes effective photoionization, resulting in enhancement of Si⁺ with higher kinetic energy and then in high-quality ablation.