著者
花田 修賢 杉岡 幸次 高瀬 史裕 宮本 岩男 高井 裕司 緑川 克美
出版者
一般社団法人 スマートプロセス学会 (旧高温学会)
雑誌
高温学会誌 (ISSN:03871096)
巻号頁・発行日
vol.30, no.2, pp.105-110, 2004
被引用文献数
4

Crack-free microfabrication of sapphire with little debris deposition and little swelling around ablated regions by laser-induced plasma-assisted ablation (LIPAA) using a second harmonic of Q-switched Nd:YAG laser is described. LIPAA process has been originally developed by ourselves in which merely a single conventional pulsed laser is used. In this process, the wavelength of laser beam must be transparent to the substrate, so that the laser beam goes through the substrate first and is then absorbed by a metal target placed behind. For laser fluence above ablation threshold for the target and below damage threshold for the substrate, the laser-induced plasma is generated from the metal target and then the species fly towards the rear surface of the substrates with very high speed. Due to the interaction of the laser beam and the plasma, ablation takes place at the rear surface of the substrate. Dependence of ablation depth and width of ablated grooves on scanning speed and target-substrate distance are investigated. Based on the obtained results, LIPAA process is applied for scribing of sapphire substrates. Double scan of laser beam with a shift of the focal point shows a great potential of high-quality scribing of sapphire substrates.
著者
小幡 孝太郎 杉岡 幸次 甲野 竜哉 高井 裕司 豊田 浩一 緑川 克美
出版者
一般社団法人 電気学会
雑誌
電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society (ISSN:03854221)
巻号頁・発行日
vol.123, no.2, pp.241-245, 2003-02-01
参考文献数
13

Dynamics of ablation of fused silica by multiwavelength excitation process using F<sub>2</sub> and KrF excimer laser has been investigated by energy analyzed mass spectrometry of ablated species. The number of generated Si<sup>+</sup> ion by multiwavelength excitation process corresponds to that by single-F<sub>2</sub> laser ablation and to approximately 2.1 times higher than that by single-KrF excimer laser ablation. In addition, kinetic energy distribution of Si<sup>+</sup> ablated by multiwavelength excitation process shows almost same as that by single-F<sub>2</sub> laser ablation. We regard that absorption of KrF excimer laser by excited state generated by F<sub>2</sub> laser (excited-state absorption: ESA) causes effective photoionization, resulting in enhancement of Si<sup>+</sup> with higher kinetic energy and then in high-quality ablation.