著者

上田 充 伊藤 洋

出版者

社団法人 有機合成化学協会

雑誌

有機合成化学協会誌 (ISSN:00379980)

巻号頁・発行日

vol.49, no.5, pp.437-450, 1991-05-01 (Released:2009-11-16)

参考文献数

42

被引用文献数

1 2

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The remarkable advancement of the microelectronics technology we have witnessed in the past decade are the direct result of the increase in the number of components per chip, which has been made possible by decreasing the minimum feature size on the chip. The feature size continues to shrink, placing stringent demands on resist materials that are used to fabricate minute integrated circuit devices. Reduction of the feature size to <0.5 μm will require the introduction of new lithographic technologies that employ short wavelength radiations such as deep UV (<300 nm), electron beams and X-rays. However, these high resolution lithographic technologies demand extremely high resist sensitivities for their economical operation. The concept of “chemical amplification” was proposed in 1982 to dramatically boost the sensitivity through incorporation of a gain mechanism in imaging chemistries. In this scheme, photochemically generated acids are used as catalyst to induce a cascade of subsequent chemical reactions in the resist film. The use of photochemical acid generators has not only provided high sensitivities but also offered high contrast and resolution, allowing the design of a whole new family of advanced resist systems, which are reviewed in this paper with emphasis placed on the chemistry responsible for imaging.

著者

東原 知哉 上田 充

出版者

合成樹脂工業協会

雑誌

ネットワークポリマー (ISSN:13420577)

巻号頁・発行日

vol.30, no.5, pp.261-272, 2009 (Released:2013-03-29)

参考文献数

28

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重縮合は高分子生成反応の中で重要な反応のひとつである。ここでは重縮合の基礎を簡単に述べた後に,最近のこの分野の進展,すなわち,精密重縮合に関するi)分子量および分子量分布の精密制御 ii)ハイパーブランチポリマーの分岐度の制御 iii)位置選択的カップリング重縮合,更にはこれまでの理論と異なる iv)非等モルのモノマーからの高分子量ポリマーの合成について紹介する。