著者
Fukata N. Oshima T. Okada N. Murakami K. Kizuka T. Tsurui T. Ito S.
出版者
American Institute of Physics
雑誌
Journal of applied physics (ISSN:00218979)
巻号頁・発行日
vol.100, no.2, pp.024311, 2006-07
被引用文献数
44 33

The phonon confinement and self-limiting oxidation effects of silicon nanowires (SiNWs) synthesized by laser ablation were investigated. The size of SiNWs was controlled by the synthesis parameters during laser ablation and the subsequent thermal oxidation. Thermal oxidation increases the thickness of the SiNWs' surface oxide layer, resulting in a decrease in their crystalline Si core diameter. This effect causes a downshift and asymmetric broadening of the Si optical phonon peak due to phonon confinement, while excess oxidation causes an upshift due to compressive stress. The compressive stress retarded the oxidation of the SiNWs by self-limiting oxidation effect. This result shows that the Si core diameter can be controlled by compressive stress.
著者
Fukata N. Chen J. Sekiguchi T. Matsushita S. Oshima T. Uchida N. Murakami K. Tsurui T. Ito S.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.90, no.15, pp.153117, 2007-04
被引用文献数
40 32

Phosphorus (P) doping was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. At least three types of signals were observed by electron spin resonance (ESR) at 4.2 K. Phosphorus doping into substitutional sites of crystalline Si in SiNWs was demonstrated by the detection of an ESR signal with a g value of 1.998, which corresponds to conduction electrons in crystalline Si, and by an energy-dispersive x-ray spectroscopy spectrum of the P Kalpha line. The ESR results also revealed the presence of defects. These defects were partially passivated by hydrogen and oxygen atoms.
著者
Fukata N. Oshima T. Murakami K. Kizuka T. Tsurui T. Ito S.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.86, no.21, pp.213112, 2005-05
被引用文献数
79 50

A gradual downshift and asymmetric broadening of the Si optical phonon peak were observed by Raman scattering measurements of continuously thermally oxidized silicon nanowires (SiNWs) synthesized by laser ablation. This downshift and broadening can be interpreted by the phonon confinement effect. Further thermal oxidation produced a reverse change; namely, an upshift of the optical phonon peak. This is considered to be due to compressive stress since this stress was relieved by removing the oxide layers formed around the SiNW cores, resulting in a downshift of the optical phonon peak.
著者
齋藤 宏文 MASUMOTO Y. MIZUNO T. MIURA A. HASHIMOTO M. OGAWA H. TACHIKAWA S. OSHIMA T. CHOKI A. FUKUDA H. HIRAHARA M. OKANO S
出版者
一般社団法人電子情報通信学会
雑誌
電子情報通信学会技術研究報告. SANE, 宇宙・航行エレクトロニクス (ISSN:09135685)
巻号頁・発行日
vol.100, no.465, pp.39-48, 2000-11-17

本論文は、オーロラ微細構造の観測と先端衛星技術の軌道上実証を目的とするピギーバック衛星INDEXの概要について紹介する。INDEX衛星は2002年にH2Aのピギーバックとして打上げられる事を目標に、開発中の50kg級の衛星である。フォールトトレラントな3重多数決高速CPUシステム(SH-3, 60MHz)によって、コマンド・テレメトリ処理、姿勢制御、理学データ圧縮等、衛星のほとんどの機能が制御される。姿勢制御は、0.2°以下の制御精度を目標とする3軸姿勢安定方式である。SOI宇宙用デバイス、太陽集光型高効率パドル、リチウムイオン電池、全方位アンテナGPS受信機、可変放射率素子等の、先進技術の軌道上実証を合わせて行う。