著者
Tawarayama Kazuo Aoyama Hajime Matsunaga Kentaro Shunko Magoshi Yukiyasu Arisawa Taiga Uno
出版者
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
雑誌
Jpn J Appl Phys (ISSN:00214922)
巻号頁・発行日
vol.49, no.6, pp.06GD01-06GD01-4, 2010-06-25
被引用文献数
1

EUV1 is a full-field extreme-ultraviolet (EUV) exposure tool that was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in scanning exposure experiments using line-and-space (L&S) patterns, Selete Standard Resist 4 (SSR4), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma=0.8$). Results show that 28 nm L&S patterns are resolved and that the critical dimension (CD) uniformity across a shot is 3.7 nm. Simulations predict that the use of dipole illumination will push the resolution limit down to a half pitch of 20 nm for L&S patterns. Moreover, the results of test site exposures using dipole illumination indicate that the EUV1 is suitable for device fabrication beyond the 22 nm node.