著者
Tawarayama Kazuo Aoyama Hajime Kamo Takashi Magoshi Shunko Tanaka Yuusuke Shirai Seiichiro Tanaka Hiroyuki
出版者
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
雑誌
Jpn J Appl Phys (ISSN:00214922)
巻号頁・発行日
vol.48, no.6, pp.06FA02-06FA02-6, 2009-06-25
被引用文献数
6

The Selete full-field etreme ultraviolet (EUV) exposure tool, the EUV1, was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line and space (L&S) patterns, Selete Standard Resist 03 (SSR3), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma = 0.8$). The results showed that 25 nm L&S patterns were resolved. Dynamic exposure experiments showed the resolution to be 45 nm across the exposure field and the critical dimension (CD) uniformity across a shot to be 7 nm, which is sufficient for an alpha-level lithography tool.
著者
Tawarayama Kazuo Aoyama Hajime Matsunaga Kentaro Shunko Magoshi Yukiyasu Arisawa Taiga Uno
出版者
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
雑誌
Jpn J Appl Phys (ISSN:00214922)
巻号頁・発行日
vol.49, no.6, pp.06GD01-06GD01-4, 2010-06-25
被引用文献数
1

EUV1 is a full-field extreme-ultraviolet (EUV) exposure tool that was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in scanning exposure experiments using line-and-space (L&S) patterns, Selete Standard Resist 4 (SSR4), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma=0.8$). Results show that 28 nm L&S patterns are resolved and that the critical dimension (CD) uniformity across a shot is 3.7 nm. Simulations predict that the use of dipole illumination will push the resolution limit down to a half pitch of 20 nm for L&S patterns. Moreover, the results of test site exposures using dipole illumination indicate that the EUV1 is suitable for device fabrication beyond the 22 nm node.