The Selete full-field etreme ultraviolet (EUV) exposure tool, the EUV1, was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line and space (L&S) patterns, Selete Standard Resist 03 (SSR3), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma = 0.8$). The results showed that 25 nm L&S patterns were resolved. Dynamic exposure experiments showed the resolution to be 45 nm across the exposure field and the critical dimension (CD) uniformity across a shot to be 7 nm, which is sufficient for an alpha-level lithography tool.
EUV1 is a full-field extreme-ultraviolet (EUV) exposure tool that was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in scanning exposure experiments using line-and-space (L&S) patterns, Selete Standard Resist 4 (SSR4), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma=0.8$). Results show that 28 nm L&S patterns are resolved and that the critical dimension (CD) uniformity across a shot is 3.7 nm. Simulations predict that the use of dipole illumination will push the resolution limit down to a half pitch of 20 nm for L&S patterns. Moreover, the results of test site exposures using dipole illumination indicate that the EUV1 is suitable for device fabrication beyond the 22 nm node.