基盤(C)代表、分担で採択されました
ミストCVD法を用いた窒化物半導体向けゲート絶縁膜堆積プロセス開発とMOSデバイス応用
https://t.co/uCZhKIjfj3
Study on high-κ dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors
https://t.co/KiejDUSYut https://t.co/xY02xoFhZh
基盤(C)代表、分担で採択されました
ミストCVD法を用いた窒化物半導体向けゲート絶縁膜堆積プロセス開発とMOSデバイス応用
https://t.co/uCZhKIjfj3
Study on high-κ dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors
https://t.co/KiejDUSYut https://t.co/xY02xoFhZh
#IROAST Director Takashima's paper was added on our website! 高島研究機構長の論文がIROASTウェブサイトに追加されました!
https://t.co/TbfahmW1gs
https://t.co/Y7yfR4f9vr
#kumamotouniversity #熊本大学 #research #研究@jstage_ej
Associate Professor Higaki Takumi's paper "Wide-range segmentation of cotyledon epidermal cells for morphometrical analysis and mechanical simulation" has been released online.
https://t.co/JcQXAjfp4r
#IROAST #research #j-stage
We received some questions about the cold-storage of two-cell embryos at #TT2020VIRTUAL. We published a paper about the technique in this year.
https://t.co/vkjBJBkRSw