著者
中村 雅一 佐久間 広貴 酒井 正俊 飯塚 正明 工藤 一浩
出版者
公益社団法人 日本表面科学会
雑誌
表面科学 (ISSN:03885321)
巻号頁・発行日
vol.24, no.2, pp.77-82, 2003-02-10 (Released:2009-01-27)
参考文献数
15

This article presents the concept and some fundamental research on ‘self-assembled’ nanoscale transistors using charge transfer (CT) complexes. First, TTF-TCNQ CT complex wires of organic metals having high conductivity, are formed by applying electric field during vacuum deposition. Then, a self-aligned active part is formed in the gap between a pair of grown wires. The semiconductive part spontaneously formed at the point of wire contact can be used as an active part; besides, we can employ the metal-semiconductor (metal-insulator) phase transition devices consisting of CT complex bilayers of which electronic structure is modulated by external electric field. On the CT complex wires and CT complex bilayer transistors, some experimental results are presented.