- 著者
-
杉岡 幸次
十文字 正之
高井 裕司
田代 英夫
豊田 浩一
- 出版者
- 一般社団法人 電気学会
- 雑誌
- 電気学会論文誌A(基礎・材料・共通部門誌) (ISSN:03854205)
- 巻号頁・発行日
- vol.115, no.9, pp.903-911, 1995-08-20 (Released:2008-07-15)
- 参考文献数
- 21
- 被引用文献数
-
1
Simultaneous incorporation and deposition of Si by KrF excimer laser beam irradiation in a silane (SiH4) gas ambient realize to form functionally gradient structure in stainless-steel 304. The process is referred to as the laser implant-deposition (LID). The basic model to achieve such a gradient structure is investigated by analyzing Si depth profiles and total quantities of supplied Si atoms (Si dose) for various experimental conditions. The theories of this model involve both of the photodecomposition of SiH4 gas by KrF excimer laser photons and liquid-phase difusion of the dissociated Si atoms into the stainless-steel. The Si dose is empirically estimated by taking account of the photodecomposition and the mass transport theory. The Si depth profiles are calculated by the liquid-phase diffusion model using the estimated Si dose, showing good agreement with the experimental results. In addition, the hardness, the corrosin property, and the thermal stability of the gradient structure are discussed.