著者

鳥海 明

出版者

公益社団法人 応用物理学会

雑誌

応用物理 (ISSN:03698009)

巻号頁・発行日

vol.89, no.8, pp.433-440, 2020-08-10 (Released:2020-08-10)

著者

鳥海 明

出版者

公益社団法人 日本表面科学会

雑誌

表面科学 (ISSN:03885321)

巻号頁・発行日

vol.33, no.11, pp.622-627, 2012-10-10 (Released:2012-11-20)

参考文献数

16

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This paper discusses the GeO2/Ge gate stack formation on the basis of the interface reaction control of Ge. The Ge oxidation is quite different from the Si one in terms of the fact that GeO desorption should be taken into account in the oxidation process. By using high-pressure oxidation, GeO desorption is thermodynamically suppressed, resulting that nearly perfect C-V characteristics in MOS capacitors and the record high electron mobility in n-channel MOSFETs have been demonstrated.

著者

鳥海 明

出版者

公益社団法人 日本表面科学会

雑誌

表面科学 (ISSN:03885321)

巻号頁・発行日

vol.26, no.5, pp.242-248, 2005-05-10 (Released:2007-12-19)

参考文献数

28

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This paper briefly reviews challenges and prospects for high-κ gate dielectric technology, mainly focusing on the fundamental material properties. First, we need to understand the origin of high dielectric constant of those materials, and then we can consider some material engineering such as the dielectric constant improvement as well as overcome drawbacks such as the fragile reliability, on the basis of mechanisms giving rise to the high dielectric constant. From the device performance point of view, the mobility and threshold voltage controls are necessarily required for employing high-κ materials in actual ULSIs. It is also discussed that the gate electrode selection is very important as well as the high-κ gate dielectrics in terms of the Fermi level pinning. Finally, it is emphasized that the material scalability applicable for a couple of technology nodes should be taken into account for the material selection.