- 著者
-
有馬 健太
- 出版者
- 公益社団法人 日本表面科学会
- 雑誌
- 表面科学 (ISSN:03885321)
- 巻号頁・発行日
- vol.38, no.7, pp.330-335, 2017-07-10 (Released:2017-07-20)
- 参考文献数
- 33
We carried out near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS) measurements of water-adsorbed ultrathin GeO2 films on Ge substrates, and the results were compared with those for SiO2 films on Si. We obtained NAP-XPS spectra at relative humidity (RH) values of up to ∼15% and showed that the GeO2/Ge structures attract more water molecules than the SiO2/Si structures at RH above ∼10−4%. This is probably because water molecules infiltrate the GeO2 films to form hydroxyls. Then we revealed positive charging of the water-adsorbed SiO2 films by their interaction with X-rays. For the water-adsorbed GeO2 films, we observed greater positive charging of the films, of which origin is discussed.