著者
鈴木 誠也
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.64, no.8, pp.358-363, 2021-08-10 (Released:2021-08-10)
参考文献数
13

Germanene, a graphene-like honeycomb crystal of germanium, has been attracting immense attention owing to its exotic properties such as a tunable bandgap and high carrier mobility. However, the fabrication of germanene-based electronic devices is difficult owing to its chemical instability. To overcome this problem, we proposed and developed a new method of germanene growth at graphene/Ag(111) and hexagonal boron nitride/Ag(111) interfaces. The grown germanene at the interfaces was stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, a vdW interface provides a nanoscale platform for growing germanene similarly to that in vacuum, while this cannot be achieved with a typical oxide interface (Al2O3). We believe that our work is of significantly importance not only for the growth of germanene but also for the fabrication of future germanene-based electronic devices.
著者
鈴木 誠也 吉村 雅満
出版者
国立研究開発法人物質・材料研究機構
雑誌
若手研究(B)
巻号頁・発行日
2017-04-01

本研究では、電子デハイス応用へ向けた界面へのゲルマネン合成を目指した。その結果、Si基板上に積層したグラフェン/Au/Ag/Geを加熱することで、グラフェンとAu-Ag-Geの混晶界面に数原子層のGe薄膜を析出させることに成功した。界面のGeはグラフェンがガスバリア層として機能するために、大気暴露しても酸化されないことを明らかにした。
著者
Liao Yen Chang 鈴木 誠也 吉村 雅満
出版者
公益社団法人 日本表面科学会
雑誌
表面科学学術講演会要旨集
巻号頁・発行日
vol.36, 2016

The influence of transfer process conditions on the morphology of graphene and its electrical characteristic were investigated in this work. The as-grown CVD graphene was transferred by using wet chemical graphene transfer process. The supporting layer and substrate are PMMA and silicon dioxide. Optical microscopy and Raman spectroscopy were used to characterize graphene quality. It was found that the concentration of supporting layer and substrate cleaning treatment such as UV ozone and oxygen gases plasma can enhance or degrade graphene quality.