著者
嘉数 誠 平間 一行 佐藤 寿志
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.39, no.4, pp.158-163, 2013 (Released:2017-05-31)
参考文献数
20

ダイヤモンド半導体は,パワーデバイス応用に最も適した材料である.しかし,ドナー,アクセプタ不純物,無欠陥,無結晶丘の大面積ウエファー単結晶などの解決すべき結晶成長の課題が残されている.特に欠陥や結晶丘の生成機構や成長表面の機構は明らかになっていない.しかし高濃度の正孔チャンネルが熱的安定化できるようになり,デバイス特性はようやく実用水準に達した.
著者
斎藤 幸夫
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.18, no.2, pp.224-230, 1991-12-15 (Released:2017-05-31)

Crystal growing in a diffusion field takes various patterns. Only with the diffusional instability, the aggregation grown has a self-similar structure, called fractal, up to a diffusion length. The growth rate is determined by the fractal dimension and the gas density. With the anisotropic surface tension, the regular dendritic morphology is stabilized, and the growth rate and the tip radius satisfies a universal scaling relation. Below a rounghening temperature of a certain interface, the singularity in the surface kinetics governs the growth and the crystal shape becomes polygonal.
著者
古川 義純
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.18, no.2, pp.156-163, 1991-12-15 (Released:2017-05-31)

A review is given on the surface melting of an ice crystal and the physical properties of the quasi-liquid layer (surface melting layer). The thermodynamics of surface covered with the q.1.1. Is first briefly described and then the recent experimental works about the q.1.1. On ice surface are summarized. An ellipsometric study indicates that the critical temperatures of surface melting are -2℃ and -4℃ for {0001} and {101^^-0} faces, respectively, and the temperature dependences of q.1.1. Thickness for both faces are fundamentally different from each other. This result is discussed in conjunction with both the thermodynamic consideration and the structure of ice/quasi-liquid inter-face. On the other hand, the physical properties of q.1.1. Are discussed on the basis of the results obtained by some experimental methods, that is, the ellipsometry, X-ray diffraction, NMR and so on.
著者
黒田 登志雄 入沢 寿美 大川 章哉
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.6, no.3-4, pp.44-50, 1979-12-25 (Released:2017-05-31)

When a polyhedral crystal grows from solution in a stable way, the supersaturation is not uniform over its interface (Berg effect). The rate of stable growth of a cubic crystal is determined by numerical calculations, by taking account of three dimensional diffusion field surrounding it and growth kinetics on the interface. It depends on the supersaturation σ_∞ at infinity as well as the crystal size L. Then, the shape stability is discussed. It is shown that a catastrophe occurs first at the center of the face, and the curve of stability limit, σ_∞ versus L, is obtained.
著者
深見 一弘 中西 周次 山崎 はるか 中戸 義禮
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.32, no.3, 2005
参考文献数
3

Electrodeposition of tin (Sn) under diffusion-limited condition showed a spontaneous potential oscillation together with the formation of highly ordered latticework structures, which grew vertically from the substrate. In-situ optical microscopic inspection revealed that the latticeworks are formed in synchronization with the potential oscillation.
著者
石川 正道
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.39, no.2, pp.83-87, 2012 (Released:2017-05-31)
参考文献数
9

コロイド結晶の研究は,コロイド科学でよく知られているDLVO理論の発展と深く関わっている.コロイド粒子は,水中にて負に帯電しており荷電コロイドともよばれるが,DLVO理論によれば荷電コロイド間には斥力が働く必要がある.近年,コロイド粒子間に引力が作用すると考えざるを得ない実験結果が見出されるようになり,論文誌上にて相転移のメカニズムに関する議論が様々な観点から行われている.最近では著者らを中心に,日本の宇宙実験施設「きぼう」を用いた実証実験が進められている.
著者
黒田 登志雄 Lacmann Rolf
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.6, no.3, pp.51-64, 1979-12-25

The new interpretation on habits ofice growing from vapour is proposed. The primary habits of ice alternate three times (plates→ - 4℃→ columns → -10℃ → plates→from -20℃ to -35℃ → columns) with decreasing temperature. The theory is based on a viewpoint that the surface of ice just below 0℃ is covered with a quasi liquid layer, whose depth or coverage 〓 decreases with falling temperature, and therefore the growth mechanism of a surface changes also as followings : i) Vapour-Quasi Liquid-Solid-Mechanism (〓>1) , ii) Adhesive Growth on a surface strongly adsorbed by water molecules (0.01<〓<1) and iii) Two Dimensional Nucleation Growth on a singular surface (〓<0.01) . As the change in surface structure as well as growth mechanism depend on surface orientation, the complicated habits change is caused mainly by the combination of growth mechanism of each surface, i.e. {0001} and {101^^-0 }. The first and second transition temperature are expected to be independent on absolute supersaturation Δp as same as experiments. On the other hand the third one is the temperature where the two dimensional nucleation growth of {0001} surface reaches the one of { 101^^-0}, so that it falls with decreasing Δp. The observed marked columnar crystals can be explained only by {0001} account of spherical volume diffusion field near taking surfaces and cylindrical one near {1010} surfaces. For plate like crystals between - 10℃ and -20℃ to -35℃ the surface diffusion from {0001} to {101^^-0} and volume diffusion with cylindrical symmetry near {101^^-0} surfaces are very important.
著者
熊倉 一英 廣木 正伸 牧本 俊樹 小林 直樹
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.30, no.2, pp.89-95, 2003
参考文献数
13

We investigated the characteristics of GaN grown by metalorganic vapor phase epitaxy on SiN or Al_2O_3 masked substrates. The masks were formed by electron cyclotron resonance plasma deposition at room temperature. For regrown GaN using a SiN mask, threading dislocations from the underlayer GaN were terminated by the mask or were bending at the interface between regrown GaN and the mask from the transmission electron microscope (TEM) observation, resulting in the reduction of dislocation from 2×10^9 to 1.7×10^8cm^<-2>. Furthermore, no diffusion or segregation of Si atoms form the SiN mask was observed in secondary ion mass spectroscopy. For regrown GaN using a Al_2O_3 mask, the dislocations were also terminated at the mask. However, the horizontal dislocations were newly formed in the same manner for direct GaN growth on sapphire substrate. Moreover, the lines, similar to the structures observed as the inversion domain boundary in GaN by TEM observation, were also observed. To achieve higher quality regrown GaN using Al_2O_3 mask, it is necessary to clarify the formation mechanism for these dislocations.
著者
神野 真吾 竹田 美和 茜 俊彦 平田 智也 久野 尚志 羊 億 磯貝 佳孝 渡邊 直樹 藤原 康文 中村 新男
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.29, no.2, 2002

ErP/InP heterostructure is one of the candidates for realizing new functional high-speed magneto-electronic devices. We have investigated growth morphology of ErP on InP (001) and (111)A. ErP/InP heterostructures were grown by face-down OMVPE. ErP formed islands on each orientation, while island size and height were quite different between two orientations.
著者
佐藤 清隆
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.11, no.4, pp.157-175, 1984-12-25 (Released:2017-05-31)

Recent works on crystallization processes of polymorphic modifications of long-chain stearic acid have been reviewed. Among three typical polymorphs, A, B and C, the latter two were investigated in more detail. First, the thermodynamic parameters in the crystallization processes, i.e, surface energies and solubilities of the polymorphic modifications, were reported. The surface energies of the low-indexed faces of C were found to have lower values than those of B. As for the solubility, it was experimentally found that B and C have the same value at 32℃; above this temperature the solubility of C is lower than that of B, while B has the lowest solubility below 32℃. A always showed the higher solubility than the other two polymorphs at any temperatures. This means that B is the low-temperature stable polymorph and C is the high-temperature stable one, and that A is always metastable. On the nucleation and growth of three polymorphs, B prevailed at lower temperatures and supersaturations, while A and C at higher supersaturations and temperatures.
著者
藤原 靖幸 太子 敏則 干川 圭吾 小浜 恵一 胡 肖兵 小林 俊介 幾原 裕美 Craig Fisher 幾原 雄一 射場 英紀
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.46, no.1, pp.46-1-04, 2019 (Released:2019-04-27)
参考文献数
22

Bulk single crystals of the perovskite LixLa(1-x)/3NbO3, which is one of the materials used as the solid electrolyte in all-solid lithium-ion batteries, have been grown for the first time by the directional solidification method. The ionic conductivity measured in the growth direction of the single crystal wafer of LixLa(1-x)/3NbO3 and the anisotropy of ionic conduction in solid electrolyte were experimentally confirmed for the first time by using LixLa(1-x)/3NbO3 single crystals. Here, the results of four experiments on LixLa(1-x)/3NbO3 bulk single crystals are presented:  (1) growth of solid electrolyte LixLa(1-x)/3NbO3 bulk single crystals, (2) ionic conduction in LixLa(1-x)/3NbO3 single crystal, (3) anisotropy of ionic conduction in LixLa(1-x)/3NbO3 single crystal and (4) microstructure analysis of LixLa(1-x)/3NbO3 single crystal.
著者
望月 建爾
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.42, no.4, pp.290-294, 2016 (Released:2017-05-31)

Extensive molecular dynamics simulations have been performed to study the phase behavior of water confined in quasi-one-dimensional hydrophobic nanopores, namely carbon nanotubes. We provide unambiguous evidence for solid-liquid critical points by investigating (i) isotherms in the pressure-volume plane, (ii) the spontaneous solid-liquid phase separation below a certain temperature, (iii) diverging heat capacity and isothermal compressibility as a certain point is approached, (iv) continuous change of dynamical and structural properties above the point. Furthermore, the result combined with the study of confined Lennard-Jones particles suggests that the solid-liquid critical point is not uncommon in quasi-one-dimensional fluids.
著者
野口 祐二 井上 亮太郎 宮山 勝
出版者
日本結晶成長学会
雑誌
日本結晶成長学会誌 (ISSN:03856275)
巻号頁・発行日
vol.43, no.3, pp.161-168, 2016 (Released:2017-08-23)
参考文献数
40

The photovoltaic (PV) effect in polar materials offers great potential for light-energy conversion that generates a voltage beyond the bandgap limit of present semiconductor-based solar cells. Ferroelectrics have received renewed attention because of the ability to deliver a high voltage in the presence of ferroelastic domain walls (DWs). We report an unusually large PV response induced by ferroelastic DWs — termed ‘DW’-PV effect. The precise estimation of the bulk PV tensor in single crystals of barium titanate enables us to quantify the giant PV effect driven by 90°DWs. We show that the DW-PV effect arises from an effective electric field consisting of a potential step and a local PV component in the 90° DW region. This work offers a starting point for further investigation into the DW-PV effect of alternative systems and opens a reliable route for enhancing the PV properties in ferroelectrics based on the engineering of domain structures in either bulk or thin-film form.