著者

細川 直吉

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.19, no.3, pp.82-89, 1976-03-20 (Released:2009-09-04)

参考文献数

12

被引用文献数

1 1

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In spite of carefull regulation, the reproducibility of SiO2 deposition rate has been sometimes poor in an rf sputtering system. This paper describes systematic experiments on the relationship between the deposition rate and vacuum quality in some sputtering systems. Data of the deposition rate versus vacuum characteristic parameters such as ultimate prssure, argon flow rate during sputtering, leak rate of air or water vapour, and baking time of the sputtering chamber are given. In addition gas analysis made by quadrupole mass filter shows that the pressure of water vapour is commonly most responsible for the reproducibility of the deposition rate. Internal liquid nitrogen trap pumping selectively water has been proved to be effective to suppress the decrease of the deposition rate and to improve reproducibility.

著者

松尾 重友

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.9, no.5, pp.183-189, 1966-05-20 (Released:2009-09-29)

参考文献数

12

被引用文献数

1 1

著者

永井 康睦 斉藤 芳男 松田 七美男 酒井 修二 堀越 源一

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.32, no.3, pp.280-283, 1989-03-20 (Released:2009-10-20)

参考文献数

6

被引用文献数

1

著者

永井 康睦 酒井 修二

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.33, no.1, pp.21-27, 1990-01-20 (Released:2009-09-29)

参考文献数

6

被引用文献数

1 1

著者

酒井 純朗

出版者

The Vacuum Society of Japan

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.57, no.3, pp.79-79, 2014

著者

大橋 茂治

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.35, no.11, pp.939-942, 1992-11-20 (Released:2009-10-20)

著者

塩入 哲 本間 三孝

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.43, no.1, pp.18-23, 2000-01-20 (Released:2009-10-20)

参考文献数

19

被引用文献数

1 1

著者

西村 允

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.38, no.6, pp.560-565, 1995-06-20 (Released:2009-09-29)

参考文献数

10

被引用文献数

1

著者

内田 悦行 蟹江 徹雄 佐合 祐稔 堀 勝 服部 秀三 松井 圭司 大塚 寿次 永松 洋介

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.29, no.5, pp.424-428, 1986

著者

佐塚 昭人 森 郁信 成田 政義 森 金太郎 水谷 道雄

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.14, no.9, pp.325-333, 1971

被引用文献数

2

---

This paper deals with an evaporation synthesis of zirconium nitride thin films which are used as electrical resistors. First, the thickness distributions of films produced by multiple sources have been computed. The incidence distribution of gas molecules on a substrate also has been calculated in a system with four gas inlet nozzles. The continuous evaporation apparatus for industrial use having a three-gun system for evaporation of zirconium was developed. The power of each electron gun is capable to be controlled individually by evaporation rate monitors in order to keep the evaporation rate constant. The uniformity in thickness of the deposited films has been compared with the theoretically calculated values. The specific resistivity of films and the temperature coefficient of film resistivity have been checked in relation to the synthesis condition of zirconium nitride thin films.

著者

野田 保

出版者

The Vacuum Society of Japan

雑誌

真空技術 (ISSN:18837182)

巻号頁・発行日

vol.8, no.2, pp.75-95, 1957

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分析のやつかいな炭化水素の分析においても十分安定に高性能を発揮し得るRMU-5型質量分析計をあらたに設計製作したが, 十分にその目的を達し得た理由の一つとして, 真空系に対する配慮を十分に施したことが挙げられる。本報告においてはまず質量分析計の真空条件について簡単に論じ, 次にこの主旨にそつて設計したRMU-5型質量分析計の主排気系の各部について述べ, 最後に若干の実験結果を報告する。特に, 高速度排気によつて約2時間で10<SUP>-7</SUP>mmHgの桁に入り, 分析中でも10<SUP>-7</SUP>mmHgの桁を保ち, トラツプ冷却剤の放置寿命が24時間にも達したことは予期以上であつた。

著者

鈴木 淳 北條 久男 小林 太吉

出版者

The Vacuum Society of Japan

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.58, no.5, pp.177-180, 2015

被引用文献数

1

---

A novel quartz oscillator that has a temperature-stable output was investigated for outdoor hydrogen sensing. The output from the quartz oscillator remained almost constant for temperatures in the range of 15 to 50℃. Fluctuations of the output of the quartz oscillator in this temperature range were 0.3% at constant relative humidity of 0%RH, which corresponds to the change in the output when 0.3 vol% of hydrogen leaked in air. This change is thus sufficiently lower than the necessary minimum detection level of 1 vol% hydrogen concentration using the novel quartz oscillator's output during outdoor hydrogen sensing.<br>

著者

鈴木 亜嵐 小林 清輝

出版者

The Vacuum Society of Japan

雑誌

Journal of the Vacuum Society of Japan (ISSN:18822398)

巻号頁・発行日

vol.57, no.5, pp.197-199, 2014

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We investigated the influence of the work function of metal gate electrodes on the current component induced by exposing silicon nitride-silicon oxide double-layer films to high-energy ultraviolet (UV) illumination. Prior to UV exposure, the conduction current under negative gate bias through an aluminum-nitride-oxide-silicon structure was larger than that through a mercury-nitride-oxide-silicon structure. In these structures under negative gate bias, it has been considered that electrons injected from the metal electrodes into the nitride films dominate the conduction current. Hence, the experimental result can be explained by the notion that the probability of electron injection into the nitride film from the aluminum electrode is higher than that from the mercury electrode because of the difference of the work function between the two kinds of metals. After UV exposure, the conduction current under negative gate bias through both the structures were almost identical to each other. This result reveals that the current component after exposure to UV illumination is dominated by charge carriers generated in the bulk of the nitride film.<br>

著者

江口 剛治 桜井 弘美 原田 曠嗣 柏木 忠

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.27, no.10, pp.759-767, 1984

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Silicon oxide films have been formed by a RF bias sputter-deposition system using a quartz target in Ar or Ar/O<SUB>2</SUB> sputtering gas. Substrate bias voltage <I>V</I><SUB>b</SUB> was varied from 0 to-200 V, at the total power of 1.9 W/cm<SUP>2</SUP>.<BR>In order to evaluate the planarization effect, the step coverage of the film on AlSi patterns was examined by SEM and compared with the computer simulated profiles using the Lehmann's method, and a good agreement was obtained. Further, we have applied this planarization technology to a 6-level metallization and realized the good step coverage.<BR>The properties of the silicon-oxide films were also studied. In the case of the Ar gas sputtering, the leakage current and the compressive stress in the film increase with increasing <I>V</I><SUB>b</SUB>. It is found that the Ar/O<SUB>2</SUB> gas sputtering improves the film properties of both the inner stress and leakage current. Auger analysis indicates that the films deposited in Ar/O<SUB>2</SUB> gas have O/Si ratio of about 2, but O/Si ratio of the films deposited in Ar gas is less than 2. From these data, the improvement of the properties of the films can be explained as following; oxygen in Si-O network in the films is removed by Ar ion bombardment during bias sputtering, and damaged bond is compensated by oxygen addition.

著者

吉田 肇 城 真範 平田 正紘 秋道 斉

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:18822398)

巻号頁・発行日

vol.54, no.5, pp.298-306, 2011-05-20

被引用文献数

3

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A transmission probability <i>W</i> of gas molecules passing through a vacuum component is usually calculated using the Monte Carlo method. In the calculation, it is generally assumed that gas molecules are introduced to a smooth surface and scatter with cosine low. Since the <i>W</i> is influenced by the shape and/or roughness of the surface in practice, the precise calculation of <i>W</i> requires the inclusion of surface geometry. The conventional Monte Carlo method, however, needs very long time to calculate the <i>W</i> for a cylinder with many corrugations, in other words, rough surface. In this paper, a new method to decrease the time for a calculation with rough surface is described. In the new method, the scattering angle distribution distorted by corrugations is analytically calculated. The distorted distribution is used to determine the scattering angle of the gas molecules at the surface. In the case of a cylinder with the ratio of length to the radius <i>L/r</i> of 5, the ratio of the <i>W</i> with V-shaped corrugations to that without corrugations is 0.77 at minimum. Results of the calculation were obtained by both the new method and the conventional method, and are identical within 0.5%. The time required by the new method was more than 100 times shorter than that by the conventional one.<br>

著者

石原 啓史 小嶋 憲三 水谷 照吉 落合 鎮康

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:18822398)

巻号頁・発行日

vol.53, no.5, pp.351-352, 2010-05-20

被引用文献数

1

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As organic solar thin films fabricated by an active layer of organic materials are economical, lightweight, and flexible, as well as facilitating processing, organic solar cells have attracted considerable attention within the past few decades as a clean energy source. With this in mind, there have been global investigations and studies of the power conversion efficiency (PCE) within organic solar cells. In organic thin-film solar cells, the effect of the performance is not only dependent on an adopted active material but also the molecular orientation on the electrode. Using the mixed solution of Poly (3-hexylthiophene) and PCBM, both dissolved by solvent, an organic thin film is fabricated using the paint method (The conceptual diagram of the paint method is shown in Fig. 1) The form of the thin film was evaluated, an organic thin-film solar cell using the paint method for the active layer was made, and its performance was evaluated and examined.<br>   Using the mixed solution of Poly(3-hexylthiophene) and PCBM, both dissolved by solvent, an organic thin film is fabricated using the paint method (The conceptual diagram of the paint method is shown in Fig. 1) The morphology of the thin film was evaluated using an AFM image, UV/vis spectra, and so forth. Based on these data, an organic thin-film solar cell that used the paint method for the active layer was fabricated, and the performance was evaluated and examined. For the organic thin film solar cell fabricated using the brush painting method, the open-circuit voltage (Voc) is 0.41 V, the short circuit current density (Jsc) is 2.07 mA/cm², and the fill factor is 0.34. The efficiency η of PCE becomes 0.29%.<br>

著者

森田 清三 杉本 宜昭 大藪 範昭 クスタンセ O. 阿部 真之 ポウ P. ジェリネク P. ペレッツ R.

出版者

The Vacuum Society of Japan

雑誌

真空 (ISSN:05598516)

巻号頁・発行日

vol.50, no.3, pp.181-183, 2007-03-20

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An atomic force microscope (AFM) under noncontact and nearcontact regions operated at room-temperature (RT) in ultrahigh vacuum, is used as a tool for topography-based atomic discrimination and atomic-interchange manipulations of two intermixed atomic species on semiconductor surfaces. Noncontact AFM topography based site-specific force curves provide the chemical covalent bonding forces between the tip apex and the atoms at the surface. Here, we introduced an example related to topography-based atomic discrimination using selected Sn and Si adatoms in Sn/Si(111)-(√3 ×√3 ) surface. Recently, under nearcontact region, we found a lateral atom-interchange manipulation phenomenon at RT in Sn/Ge(111)-c(2×8) intermixed sample. This phenomenon can interchange an embedded Sn atom with a neighbor Ge atom at RT. Using the vector scan method under nearcontact region, we constructed "Atom Inlay", that is, atom letters "Sn" consisted of 19 Sn atoms embedded in Ge(111)-c(2×8) substrate. Using these methods, now we can assemble compound semiconductor nanostructures atom-by-atom.<br>