著者

岩井 洋 角嶋 邦之 川那子 高暢

出版者

公益社団法人 日本表面科学会

雑誌

表面科学 (ISSN:03885321)

巻号頁・発行日

vol.33, no.11, pp.600-609, 2012-11-10 (Released:2012-11-20)

参考文献数

48

---

MOSFET is a key component for integrated circuits which controls and helps the human activities in modern society. The demands for high performance and low power MOSFETs become stronger and stronger with the progress of smart society. Gate stack is the most critical element of the MOSFETs which controls its operation. In this report, after the explanation of the overall basics of the gate stack technology, recent status of the gate stack R & D are reviewed, focusing on that for high-k/metal gate stack.

著者

安井 学 角嶋 邦之 平林 康男 三田 信 藤田 博之

出版者

一般社団法人 電気学会

雑誌

電気学会論文誌E(センサ・マイクロマシン部門誌) (ISSN:13418939)

巻号頁・発行日

vol.123, no.11, pp.477-482, 2003 (Released:2004-02-01)

参考文献数

8

被引用文献数

1 1

---

This paper deals with the new method that makes micro-holes with electrodeposition photoresist (EDPR) as a sacrificial layer. The EDPR was deposited on a silicon-mold made by ICP-RIE. Ni film was plated on a silicon-mold covered with EDPR. Etched through a gap between a silicon-mold and the Ni film, the Ni film came off from the silicon-mold. As a result, we could make Ni films that have micro hole of 9.2µm in diameter, and 56µm in depth on an experimental basis, and verified the silicon-mold that lateral faces of columns did not bare scratch marks. Moreover, the circularity roundness was able to fill 1.5µm which was the specification of the printer nozzle.