著者

Kuh Bong Jin Choo Woong Kil Brinkman Kyle KIM Jai-Hyun DAMJANOVIC Dragan SETTER Nava

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.41, no.11, pp.6765-6767, 2002-11-30

参考文献数

8

被引用文献数

4

---

Relaxor Pb(Sc_<1/2>Nb_<1/2>)O_3 (PSN) thin films without pyrochiore phase were proccssed from the modified alkoxide solution precursors. The preparation of single phase PSN thin films has a narrow processing window due to the appearance of an undesirable pyrochlore phase and volatility of PbO. Thin film processing has been improved through selection of precursor solutions, heat treatment and optimized deposition-condition are optimized. Especially, the effects of Pt substrates seeded with additional layers upper of TiO_2 and La_<0.5>Sr_<0.5>CoO_3 are investigated through the scanning electron microscopy (SEM) scanning of filmlelectrode interfaces. Dielectric behaviors of sal-gel derived PSN thin films on two different substrates are observed. They show the evidence of relaxor-like behaviors, i.e. the temperature dependence of the dielectric constant at different applied frequencies. Films on the TiO_2/Pt/TiO_2/SiO_2/Si substrates exhibit better dielectric properties, such as frequency saturation over transition temperature and much lower dielectric loss than those on the La_<0.5>Sr_<0.5>CoO_3/Pt/TiO_2/SiO_2/Si substrates. The differences of transition behaviors between PSN thin films and bulk ceramics are also discussed in relation to the processing temperature, interface phenomena between film and electrode, relatively small thickness and strain effect of films.

著者

Nakayama Kazuya Matsuda Hideo

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.37, no.9, pp.4751-4757, 1998-09-15

被引用文献数

3

---

A new high-power (4500 V) planar metal oxide semiconductor (MOS) device is fabricated and its properties are evaluated. It has low forward voltage drop and a large reverse bias safe operating area (RBSOA), and allows easy MOS control. These properties are superior to those of the conventional insulated gate bipolar transistor (IGBT) and the gate turn-off thyristor (GTO). This is due to the conductivity modulation enhancement effect resulting from an extremely wide gate electrode, which increases the hole storage and the electron injection. At the same time, the junction field effect transistor (JFET) resistance effect does not affect the forward voltage drop. The rate of increase of the off-state voltage (dV_D/dt) during the turn-off process affects RBSOA markedly, therefore, it is important to set the gate resistance to an appropriate value. The press pack device that includes 20 chips of this device and 10 fast recovery diode chips can turn off a current of 1200 A at 3600 V DC voltage supply without a snubber circuit.

著者

Nakatani Noriyuki Hara Naoyuki

出版者

社団法人応用物理学会

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.32, no.7, pp.3204-3208, 1993-07-20

被引用文献数

12

---

Single crystals of ferroelectric triglycine sulfate (TGS) have been grown from aqueous solution containing 10 mol% of sarcosine. The crystal, referred to as SarTGS, shows a quite different habit from undoped TGS. The concentration of sarcosine incorporated in the crystal is, at most, 1/500 of the solution concentration. Although sarcosine is not chiral, an internal bias field $E_{\text{b}}$ of 40–140 kV/m is produced. The direction and intensity of $E_{\text{b}}$, as well as the domain structure, vary according to the crystal growth sector. The directions of $E_{\text{b}}$ in matching sectors in both $b$ sides of the seed crystal are opposite to each other. In the sectors where the growing surface is parallel to the $b$-axis, no bias field is produced. The cause of such a feature of $E_{\text{b}}$ in the SarTGS crystal is discussed in terms of symmetry considerations.

著者

Yamamoto Tetsuya Katayama-Yoshida Hiroshi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.38, no.2, pp.L166-L169, 1999-02-15

被引用文献数

28 523

---

We have investigated the electronic structures of n- or p-type doped ZnO based on ab initio electronic band structure calculations. We find unipolarity in ZnO; n-type doping using Al, Ga or In species decreases the Madelung energy while p-type doping using N species increases the Madelung energy, in addition to causing substantial localization of the N states. Codoping using reactive codopants, Al, Ga or In, enhances the incorporation of N acceptors in p-type codoped ZnO. We find the delocalized states of N for p-type ZnO codoped with N and Al (Ga).

著者

Xiao Deng M. Liu Hong L. Qin Ling

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.38, no.8, pp.L875-L877, 1999-08-01

被引用文献数

2

---

The Townsend first ionization coefficient α, electron attachment coefficient η and effective ionization coefficient α^^- (=α-η) in SF_6 and xenon gas mixtures were measured by the steady-state Townsend method for 22.6 &les; E/p &les; 94 V・mm^<-1>kPa^<-1> and mixture ratios of 10:90, 25:75, 50:50, 75:25 and 90:10. The limiting E/p in SF_6-Xe, (E/p)_<lim>, which represents E/p for α/P=n/P, was derived from the pre-breakdown current growth measurements, which varies approximately linearly with SF_6 concentration in the SF_6-Xe gas mixtures.

著者

HARADA Yoshifumi ISHIDA Yoshio

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Supplement (ISSN:00214922)

巻号頁・発行日

vol.20, no.3, pp.251-254, 1981-09-01

著者

SASAKI Hitoshi IKARI Atsushi TERASHIMA Kazutaka KIMURA Shigeyuki

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.34, no.7, pp.3426-3431, 1995-07-15

被引用文献数

6 55 63

---

The temperature dependence of the electrical resistivity of molten silicon was measured based on the direct-current four-probe method in the temperature range from the melting point (1,415℃) to 1,630℃. The variation of the resistivity in this temperature region was less than 0.7%, which is much smaller than previously reported values. The measured resistivity near the solodification point was about 72×10^<-6>Ωcm, which is about 8% smaller than previously reported values. The resistivity of molten silicon showed a local minimum in the range from 1,450℃ to 1,500℃. The resistivity of molten silicon was calculated based on Ziman's formula. The temperature dependence of the measured resistivity was not reproduced when the structure factor S (Q) calculated by a simple hard-sphere model was substituted into Ziman's formula, but was reproduced by using the experimental data of S (Q) measured by Waseda which shows the first peak of asymmetric shape. This result suggests that the specific melt structure of molten silicon has a significant effect on the resistivity.

著者

Miyazaki Yuzuru Kudo Kazutaka Akoshima Megumi ONO Yasuhiro KOIKE Yoji KAJITANI Tsuyoshi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.39, no.6, pp.L531-L533, 2000-06-01

被引用文献数

27 248

---

Electric resistivity, thermoelectric power and thermal conductivity of a polycrystalline sample of the composite crystal[Ca_2CoO_<3.34>]_<0.614>[CoO_2], also known as Ca_3Co_4O_9, have been measured below 300K. Metallic conductivity accompanied by large thermoelectric power has been observed down to 50K. At 300K, the sample exhibits a thermoelectric power of S = 133μV・K^<-1> resistivity of ρ = 15mΩ・cm and thermal conductivity of κ = 9.8mW・K^<-1>・cm^<-1>. The resulting dimensionless figure of merit becomes ZT_<300>=3.5×10^<-2> which is comparable to the value reported for a polycrystalline sample of NaCo_2O_4, indicating that the title compound is a potential candidate for a thermoelectric material.

著者

SAITO Yasuyuki SUGA Toru INOUE Kazuhiko MITANI Tatsuro TOMIZAWA Yutaka

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.30, no.9, pp.1940-1941, 1991-09-15

被引用文献数

1

---

We report on the drain-current (Id) Deep-level transient s-pectroscopy (DLTS) spectra of Si-implanted metal-semiconductor field effect transistors (MESFETs) with strong or weak Id low-frequency oscillations (LFOs) under the condition of high drain voltages (3 V-7 V). We found no distinguishing features directly related to the Id-LFO in these spectra having large peaks characteristic of the DLTS spectrum. These results imply that deep centers in the MESFET channel layer are not the direct origin of the Id-LFO.

著者

Miao X.S. Chong T.C. Shi L.P. TAN P.K. LI J.M. LIM K.G. QIANG W. MENG H.

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.41, no.3, pp.1679-1682, 2002-03-30

被引用文献数

1

---

The mechanism of the initialization-free phase-change optical disk was discussed. The computer simulation about the optical and thermal properties of the initialization-free disk was carried out. The results showed that Sb_2Te_3 film was a suitable additional layer of initialization-free phase-change optical disk for Ge_2Sb_<2+x>Te_5 phase-change media.

著者

HOSODA Masahiro WADA Tatsuo GARITO Anthony F. SASABE Hiroyuki

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.31, no.3, pp.L249-L251, 1992-03-01

被引用文献数

8

---

The third-order optical susceptibilities |x^<(3)>_<1111>(-3ω;ω,ω,ω)| for spin-coated films of free-base (H_2) and MnCl-octaethyl[18]porphyrins, and N,N',N",N&tprime;-tetramethyl-octaethyl[26]porphyrin-bistrifluoroacetate are determined by optical third-harmonic generation measurements at a wavelength of 1907 nm. The |x^<(3)>| values are 1.9 x 10^<-12>,2.6 x 10^<-12>, and 1.0 x 10^<-11> esu for H_2-[18]porphyrin, MnCl-[18]porphyrin, and [26]porphyrin, respectively. The enhancement of third-order nonlinear properties in macrocyclic compounds is discussed in terms of an extended π-electron system.

著者

AMANO Hiroshi KITO Masahiro HIRAMATSU Kazumasa AKASAKI Isamu

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.28, no.12, pp.L2112-L2114, 1989-12-20

被引用文献数

103 1589

---

Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is 〜2・10^<16>cm^<-3>, the hole mobility is 〜8 cm^2/ V・s and the resistivity is 〜35 Ω・cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature.

著者

WANG Y. H. YARN K. F. CHANG C. Y.

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.29, no.2, pp.L243-L246, 1990-02-20

被引用文献数

1

---

We demonstrate a new GaAs regenerative switching device with a double triangular barrier (DTB) structure, i. e., p^+-i-δ(n^+)-i-δ(p^+)-i-n^+, prepared by molecular beam epitaxy (MBE). Using the concept of sequential collapse of the internal barriers, two distinctive switching regions are established. First, a negative resistance region (S-type) is observed, followed by a positive resistance region (inverted N-shape) in between the switching behavior with the increase of applied bias. This device may have applicability for tristate logic circuits.