著者

Nagase Toshimi Ooie Toshihiko Makita Yoji KASAISHI Shuji NAKATSUKA Masahiro MIZUTANI Nobuyasu

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.40, no.11, pp.6296-6303, 2001-11-15

被引用文献数

1 9

---

Morphology, structure and photoluminescence (PL) properties of zinc oxide (ZnO) films prepared by KrF-excimer-laser irradiation of sol-gel-derived precursors were studied. The precursors with a film thickness of 100 or 180 nm were irradiated by the laser at various energy fluences (Ef). Atomic force microscopy and transmission electron microscopy observations revealed that the laser irradiation at an Ef ≧100mJ/cm^2 produced crystal growth of close-packed ZnO crystals in an upper layer. Laser irradiation at a high Ef (150mJ/cm^2) of the thinner precursor produced a remarkable crystallization throughout the film, resulting in larger grain size and smooth film surface. Our observation results suggest that the crystallization proceeds by sintering or solidification via melting. The films obtained at Ef ≧ 100mJ/cm^2 showed green PL. The PL spectra were not significantly influenced by the excitation wavelength except for the thinner film irradiated at a high Ef (150mJ/cm^2); it showed a striking increase in the green PL intensity when excited at 275 nm instead of 325 nm. The unique excitation-wavelength dependence may be related to its characteristic threshold of electron excitation.

著者

Mohri Akihiro Yuyama Tetsumori Tanaka Hitoshi HIGAKI Hiroyuki YAMAZAWA Yohei MICHISHITA Toshinori

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.39, no.12, pp.6726-6731, 2000-12-15

被引用文献数

1

---

Particles of a low current beam can be accumulated in a harmonic potential well in a high vacuum environment when they are repelled back by a local rf electric field of the frequency close to the bounce motion in the well. Here, proper damping mechanisms for the repelled particle blobs are neccessary to suppress their bounce motions. This stacking method was experimentally proved for electron beams of 1.1μA using a Multi-Ring-Electrode trap and the results were compared with numerical estimations based on a single particle model. The observed damping was much larger than the estimated one from the resistive wall effect. The stacking efficiency was nearly the same as the estimated one at the stacked number N less than 1×10^7 but it decreased with N. Experimentally obtained relationship amongst the stacked number, the incident beam energy, the rf frequency and its amplitude behaved qualitatively in the same way as the numerical results. The accumulation proceeded until the well was filled up with electrons.

著者

Kirianov Andrei Hagiwara Tomoya Kishi Hiroshi OHSATO Hitoshi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.41, no.11, pp.6934-6937, 2002-11-30

参考文献数

8

著者

SEWELL Harry

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.34, no.12, pp.6622-6630, 1995-12-01

参考文献数

3

被引用文献数

4

---

This paper reviews all the major aspects of successfully implementing a “mix and match” (Deep-UV/I-line, stepper/scanner) strategy. The resolution and linewidth-control limits of I-line are quantified for a number of the process levels and compared with the capabilities of Deep-UV step-and-scan. This analysis predicts the typical mix of steppers and scanners in a 256 MBit production line for 250 nm lithography. A step-by-step procedure to achieve and monitor successful matching is reviewed. The procedure begins by defining a “golden system”, which is used to produce reference wafers for the setup and monitoring of all the systems being mixed and matched. The reference wafers are used to ensure that the pre-aligners of the systems are calibrated and that offsets are adapted to allow the transfer of wafers between systems. The wafers are also used to match both wafer-stage grid and exposure-field distortions. The matching of both wafer-grid and stepper-field distortions are reviewed. The implementation of stage correction-tables is demonstrated. It is indicated that grid matching to better than 10 nm is achievable. It is also indicated that the dynamic scanning of a step-and-scan system allows the monitoring and correction of such typical stepper problems as field magnification and rotation. The critical aspects of multi-field matching between stepper and scanner are analyzed. The key factors that allow the successful overlaying of large, single, scanned fields with multiple, small, stepped fields are reviewed. The total overlay accuracy achieved using step-and-scan, and “mix-and-match” is analyzed and demonstrated.

著者

Koide Daiichi Yanagisawa Hitoshi Tokumaru Haruki Nakamura Shoichi Ohishi Kiyoshi Inomata Koichi Miyazaki Toshimasa

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.43, no.7, pp.4811-4815, 2004-07-15

参考文献数

8

被引用文献数

1 9

---

We describe the effectiveness of feed-forward control using the zero phase error tracking method (ZPET-FF control) of the tracking servo for high-data-transfer-rate optical disk drives, as we are developing an optical disk system to replace the conventional professional videotape recorder for recording high-definition television signals for news gathering or producing broadcast contents. The optical disk system requires a high-data-transfer-rate of more than 200 Mbps and large recording capacity. Therefore, fast and precise track-following control is indispensable. Here, we compare the characteristics of ZPET-FF control with those of conventional feedback control or repetitive control. Experimental results show that ZPET-FF control is more precise than feedback control, and the residual tracking error level is achieved with a tolerance of 10 nm at a linear velocity of 26 m/s in the experimental setup using a blue-violet laser optical head and high-density media. The feasibility of achieving precise ZPET-FF control at 15000 rpm is also presented.

著者

Miyata Emi Kouno Hirohiko Kamiyama Daisuke Kamazuka Tomoyuki Mihara Mototsugu Fukuda Mitsunori Matsuta Kensaku Tsunemi Hiroshi Minamisono Tadanori Tomida Hiroshi Miyaguchi Kazuhisa

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.42, no.7, pp.4564-4570, 2003-07-15

参考文献数

18

被引用文献数

5

---

We have investigated the radiation damage effects on a charge-coupled device (CCD) to be used for the Japanese X-ray mission, the monitor of all-sky X-ray image (MAXI), onboard the international space station (ISS). A temperature dependence of the dark current as a function of incremental dose is studied. We found that the protons having energy of ${>}292$ keV seriously increased the dark current of the devices. In order to improve the radiation tolerance of the devices, we have developed various device architectures to minimize the radiation damage in orbit. Among them, nitride oxide enables us to reduce the dark current significantly and therefore we adopted nitride oxide for the flight devices. We also compared the dark current of a device in operation and that out of operation during the proton irradiation. The dark current of the device in operation became twofold that out of operation, and we thus determined that devices would be turned off during the passage of the radiation belt. The temperature dependence of the dark current enables us to determine the electron trap level that generates the dark current. We fitted dark current as a function of temperature by the thoretical models and found that the dark current increase after proton irradiations is caused by, at least, two kinds of electron trap levels. The shallow trap level ($E_{\text{c}}-E_{\text{t}} < 0.2$ eV where $E_{\text{c}}$ and $E_{\text{t}}$ are the energy at the bottom of the conduction band and the energy level of electron trap) might be associated with oxygen which is dominant at the operating temprature of ${>}210$ K. On the other hand, another trap level is located roughly at the center of the silicon bandgap which might be associated with divacancies or P–V traps. We finally investigated the spatial distribution of the low-energy protons in the orbit of the ISS. Their density has a peak around $l \sim 20{{\degree}}$ and $b \sim -55{{\degree}}$ independent of the altitude. The peak value is roughly two orders of magnitude higher than that at the South Atlantic Anomaly.

著者

Yamamoto Keiji

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.34, no.4, pp.2043-2048, 1995-04-15

参考文献数

10

被引用文献数

1

---

A mechanical stress simulator for surface-mount devices was developed, which employed the finite-element method. The moisture distribution stage can calculate the moisture distribution of the LSI package exposed to temperature and humidity conditions. The heat conduction stage determines the time-dependent temperature distribution of the package immersed in a solder bath. Using the moisture and temperature distributions thus calculated, the mechanical stress stage gives the mechanical stress distribution in the package. Two groups of samples were prepared for solder dipping experiments. In one group, after dry baking for initialization, samples absorbed moisture by exposure at 30&deg;C 85% (absorption process). In the other group, samples were exposed at 85&deg;C 85% for 168 h and then dry-baked at 70&deg;C (desorption process). These two groups have different moisture distributions in their packages. The results of solder dipping experiments are analyzed from the calculated mechanical stress values. In the absorption process, calculated maximum von Mises equivalent stress over the sectional molding compound $\bar{\sigma}_{\rm max}$ increases monotonically with absorption time. Then, $\bar{\sigma}_{\rm max}$ approaches its saturated value as absorption time tends to infinity. In the desorption process, $\bar{\sigma}_{\rm max}$ decreases with desorption time and approaches the thermal stress value when desorption time tends to infinity. These calculations explain the effect of moisture distribution on package cracking.

著者

Davis Harold A. Keinigs Rhon K. Anderson Wallace E. Atchison Walter L. Bartsch R. Richard Benage John F. Ballard Evan O. Bowman David W. Cochrane James C. Ekdahl Carl A. Elizondo Juan M. Faehl Rickey J. Fulton Robert D. Gribble Robert F. Guzik Joyce A. Kyrala George A. Miller R. Bruce Nielsen Kurt E. Parker Jerald V. Parsons W. Mark Munson Carter P. Oro David M. Rodriguez George E. Rogers Harold H. Scudder David W. Shlachter Jack S. Stokes John L. Taylor Antoinette J. Trainor R. James Turchi Peter J. Wood Blake P.

出版者

公益社団法人 応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.40, no.2, pp.930-934, 2001-02-28

被引用文献数

8

---

Atlas is a pulsed-power facility under development at Los Alamos National Laboratory to drive high-energy density experiments. Atlas will be operational in the summer of 2000 and is optimized for the study of dynamic material properties, hydrodynamics, and dense plasmas under extreme conditions. Atlas is designed to implode heavy-liner loads in a z-pinch configuration. The peak current of 30 MA is delivered in 4 $\mu$s. A typical Atlas liner is a 47-gram-aluminum cylinder with ${\sim}4$-cm radius and 4-cm length. Three to five MJ of kinetic energy will be delivered to the load. Using composite layers and a variety of interior target designs, a wide variety of experiments in ${\sim}\text{cm}^{3}$ volumes will be performed. Atlas applications, machine design, and the status of the project are reviewed.

著者

Zheng Hong Reaney Ian M. Muir Duncan Price Tim Iddles David M.

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.44, no.5, pp.3087-3090, 2005-05-15

被引用文献数

14

---

BaLa4Ti4O15 (BLT) is a hexagonal perovskite-related compound with a temperature coefficient of resonant frequency ($\tau_{\text{f}}$) of $-2$ ppm/°C, relative permittivity $(\varepsilon_{\text{r}})\sim 44$ and figure of merit $(Q\cdot f)\sim 44000$ GHz. Ba4Nd9.333Ti18O54 (BNT) has a tungsten-bronze-related structure with $\varepsilon_{\text{r}}\sim 78$, $Q\cdot f\approx 11000$ GHz and $\tau_{\text{f}}$ of $+47$ ppm/°C. The microstructures and microwave dielectric properties of $x$BNT–($1-x$)BLT ($0\leq x\leq 1$) composite ceramics have been studied. X-ray diffraction analysis and scanning electron microscopy revealed that there was limited inter-reaction between the two phases and that samples were composed largely of BNT and BLT, although some deterioration in measured $\varepsilon_{\text{r}}$ with respect to calculated values was observed. The optimum compositions were $x=0.55$ and 0.75 for which $\varepsilon_{\text{r}}\sim 63$, $\tau_{\text{f}}\sim-20$ ppm/°C and $Q\cdot f>10{,}000$ GHz.

著者

OHMI Tadahiro

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.33, no.12, pp.6747-6755, 1994-12-30

被引用文献数

11 21

---

In addition to three-terminal devices such as metal oxide semiconductor (MOS) transistors and bipolar transistors, the introduction of four-terminal devices such as neuron MOS transistor is essentially required for the realization of intelligent ULSI systems which is most crucial for electronics in the 21st century. Four-terminal devices will allow us to make ULSI hardware more flexible, real-time programmable, and thus more intelligent based on bi-nary multi-valued analog-merged hardware computation algorithm. For such systems to work, we must establish high-accuracy device fabrication processes based on the concept of ultraclean technology. The simultaneous fulfillment of three principles, viz. ultraclean wafer surface, ultraclean processing environment, and perfect process-parameter control, is the key to high-performance processes for fabricating advanced subhalf-micron and sub-quarter-micron ULSI devices. Advanced process technologies have been realized for the first time by ultraclean processing, making it possible to establish total low-temperature processing, such as gate oxidation at 45O℃, implanted region anneal at 45O℃, BPSG film reflow at 45O℃ and single-crystal silicon epitaxy with simultaneous doping at 3OO℃ by introducing very well regulated ion bombardment during processing which is most essential for obtaining high-performance subhalf-micron and subquarter-micron ULSI.

著者

Park Wug-Dong Tanioka Kenkichi

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.42, no.4, pp.1954-1956, 2003-04-15

被引用文献数

11

---

In this paper, spectral responses of Te-doped a-Se HARP (High-gain Avalanche Rushing amorphous Photoconductor) thin films for a solid state image sensor have been reported. Te concentrations of Te-doped layer in a-Se HARP thin film were 15 wt.% and 26 wt.%, and thicknesses of Te-doped layer were 60 nm, 90 nm, and 120 nm. Spectral responses of Te-doped a-Se HARP films were investigated at bias voltages of 40 V and 60 V. Relative sensitivity and quantum efficiency of a-Se HARP films at 60 V were found to be improved by the increase of Te-doped layer thickness. This improvement is explained by the increased photogeneration efficiency at long wavelength region by the increase of Te-doped layer thickness and avalanche multiplication of the photogenerated carriers at a high electric field.

著者

FUNAKI Kazuo NIDOME Teruhide YAMAFUJI Kaoru

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.21, no.8, pp.1121-1126, 1982-08-20

被引用文献数

29

---

In a nonideal superconducting wire, a number of strange magnetic phenomena have been observed in an AC magnetic field superposed perpendicularly on a DC bias field. When the DC bias field is applied parallel to the wire axis, these strange phenomena are called longitudinal-field effects, while abnonnal transverse-field effects are observed when the DC bias field is perpendicular to the wire axis. In this paper, the conditions for the appearance of the abnormal transverse-field effect are investigated in detail for a superconducting Nb50%Ta ribbon. When the dimension ratios were changed, we observed a change in the magnetic behavior from the longitudinal-field to the abnormal transverse-field effect. It is suggested that such a change originates from a change in the pinning characteristics due to various motional styles of flux lines.

著者

Kim Jin-Soo Kim So-Jung Kim Ho-Gi LEE Duck-Chool UCHINO Kenji

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.38, no.3, pp.1433-1437, 1999-03-15

参考文献数

16

被引用文献数

16

---

High-power piezoelectric materials are presently being extensively developed for applications such as ultrasonic motors and piezoelectric transformers. In this study, the piezoelectric and dielectric properties of Fe_2O_3-doped 0.57Pb(Sc_<1/2>Nb_<1/2>)O_3-0.43PbTiO_3 (hereafter 0.57PSN-0.43PT), which is the morphotropic phase boundary composition of the PSN-PT system, were investigated. The maximum dielectric constant (ε_<33>/ε_0=2551) and the minimum dielectric loss (tanδ = 0.51%) at room temperature were obtained at Fe_2O_3 additions of 0.1 wt% and 0.3 wt%, respectively. The temperature dependence of the dielectric constant and the dielectric loss was measured between room temperature and 350℃. With the addition of Fe_2O_3, the piezoelectric constant d_<33> and electromechanical coupling factor k_p were slightly decreased, but the mechanical quality factor Q_m was significantly increased. The highest mechanical quality factor (Q_m = 297) was obtained at 0.3 wt% Fe_2O_3, which is 4.4 times higher than that of nondoped 0.57PSN-0.43PT ceramics. The P-E and S-E loops of the samples at room temperature and at 1.0 Hz were measured at the same time using an automated polarization measuring system.

著者

Kuh Bong Jin Choo Woong Kil Brinkman Kyle KIM Jai-Hyun DAMJANOVIC Dragan SETTER Nava

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.41, no.11, pp.6765-6767, 2002-11-30

参考文献数

8

被引用文献数

4

---

Relaxor Pb(Sc_<1/2>Nb_<1/2>)O_3 (PSN) thin films without pyrochiore phase were proccssed from the modified alkoxide solution precursors. The preparation of single phase PSN thin films has a narrow processing window due to the appearance of an undesirable pyrochlore phase and volatility of PbO. Thin film processing has been improved through selection of precursor solutions, heat treatment and optimized deposition-condition are optimized. Especially, the effects of Pt substrates seeded with additional layers upper of TiO_2 and La_<0.5>Sr_<0.5>CoO_3 are investigated through the scanning electron microscopy (SEM) scanning of filmlelectrode interfaces. Dielectric behaviors of sal-gel derived PSN thin films on two different substrates are observed. They show the evidence of relaxor-like behaviors, i.e. the temperature dependence of the dielectric constant at different applied frequencies. Films on the TiO_2/Pt/TiO_2/SiO_2/Si substrates exhibit better dielectric properties, such as frequency saturation over transition temperature and much lower dielectric loss than those on the La_<0.5>Sr_<0.5>CoO_3/Pt/TiO_2/SiO_2/Si substrates. The differences of transition behaviors between PSN thin films and bulk ceramics are also discussed in relation to the processing temperature, interface phenomena between film and electrode, relatively small thickness and strain effect of films.

著者

Nakayama Kazuya Matsuda Hideo

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.37, no.9, pp.4751-4757, 1998-09-15

被引用文献数

3

---

A new high-power (4500 V) planar metal oxide semiconductor (MOS) device is fabricated and its properties are evaluated. It has low forward voltage drop and a large reverse bias safe operating area (RBSOA), and allows easy MOS control. These properties are superior to those of the conventional insulated gate bipolar transistor (IGBT) and the gate turn-off thyristor (GTO). This is due to the conductivity modulation enhancement effect resulting from an extremely wide gate electrode, which increases the hole storage and the electron injection. At the same time, the junction field effect transistor (JFET) resistance effect does not affect the forward voltage drop. The rate of increase of the off-state voltage (dV_D/dt) during the turn-off process affects RBSOA markedly, therefore, it is important to set the gate resistance to an appropriate value. The press pack device that includes 20 chips of this device and 10 fast recovery diode chips can turn off a current of 1200 A at 3600 V DC voltage supply without a snubber circuit.

著者

SASAKI Hitoshi IKARI Atsushi TERASHIMA Kazutaka KIMURA Shigeyuki

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.34, no.7, pp.3426-3431, 1995-07-15

被引用文献数

6 55 63

---

The temperature dependence of the electrical resistivity of molten silicon was measured based on the direct-current four-probe method in the temperature range from the melting point (1,415℃) to 1,630℃. The variation of the resistivity in this temperature region was less than 0.7%, which is much smaller than previously reported values. The measured resistivity near the solodification point was about 72×10^<-6>Ωcm, which is about 8% smaller than previously reported values. The resistivity of molten silicon showed a local minimum in the range from 1,450℃ to 1,500℃. The resistivity of molten silicon was calculated based on Ziman's formula. The temperature dependence of the measured resistivity was not reproduced when the structure factor S (Q) calculated by a simple hard-sphere model was substituted into Ziman's formula, but was reproduced by using the experimental data of S (Q) measured by Waseda which shows the first peak of asymmetric shape. This result suggests that the specific melt structure of molten silicon has a significant effect on the resistivity.

著者

SAITO Yasuyuki SUGA Toru INOUE Kazuhiko MITANI Tatsuro TOMIZAWA Yutaka

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.30, no.9, pp.1940-1941, 1991-09-15

被引用文献数

1

---

We report on the drain-current (Id) Deep-level transient s-pectroscopy (DLTS) spectra of Si-implanted metal-semiconductor field effect transistors (MESFETs) with strong or weak Id low-frequency oscillations (LFOs) under the condition of high drain voltages (3 V-7 V). We found no distinguishing features directly related to the Id-LFO in these spectra having large peaks characteristic of the DLTS spectrum. These results imply that deep centers in the MESFET channel layer are not the direct origin of the Id-LFO.

著者

Miao X.S. Chong T.C. Shi L.P. TAN P.K. LI J.M. LIM K.G. QIANG W. MENG H.

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.41, no.3, pp.1679-1682, 2002-03-30

被引用文献数

1

---

The mechanism of the initialization-free phase-change optical disk was discussed. The computer simulation about the optical and thermal properties of the initialization-free disk was carried out. The results showed that Sb_2Te_3 film was a suitable additional layer of initialization-free phase-change optical disk for Ge_2Sb_<2+x>Te_5 phase-change media.