ランキング (合計) - Ceek.jp Altmetrics

1 0 0 0 OA 多数桁計算における高速アルゴリズムの研究

著者: 後保範
出版者: Waseda University
巻号頁・発行日: 2005-03

制度:新 ; 文部省報告番号:乙1953号 ; 学位の種類:博士(工学) ; 授与年月日:2005/3/3 ; 早大学位記番号:新4033

2006-07-05 00:24:00
1 はてなブックマーク

http://hdl.handle.net/2065/2934

1 0 0 0 OA Formation and electric property measurement of nanosized patterns of tantalum oxide by current sensing atomic force microscope

著者: Kim Young-ho Zhao Jianwei Uosaki Kohei
出版者: American Institute of Physics
雑誌: Journal of Applied Physics (ISSN:00218979)
巻号頁・発行日: vol.94, no.12, pp.7733-7738, 2003-12-15
被引用文献数: 8

Nanosized patterns of tantalum oxide were fabricated on a tantalum substrate by applying a potential pulse utilizing current sensing atomic force microscopy (CSAFM). The dimensions of the dots were strongly dependent on the bias applied, scan rate, and potential pulse duration. By controlling these variables, the minimum size nanodots with full width at half maximum of 35 nm was achieved. Immediately after pattern formation, the electrical properties of the Ta oxide nanodots were measured using CSAFM. The charge transport at the CSAFM tip and the nanosized Ta oxide dot can be described by Poole–Frenkel type conduction. The relative dielectric constant of the nanosized Ta2O5 dots was calculated to be 17.8–24.3, showing that the quality of the oxide was high. In addition, by controlling the substrate bias applied, pulse duration, and tip scan speed, nanosized Ta oxide lines with the desired dimensions were prepared.