著者
永村 直佳
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.65, no.11, pp.532, 2022-11-10 (Released:2022-11-10)
参考文献数
6
著者
鈴木 誠也
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.64, no.8, pp.358-363, 2021-08-10 (Released:2021-08-10)
参考文献数
13

Germanene, a graphene-like honeycomb crystal of germanium, has been attracting immense attention owing to its exotic properties such as a tunable bandgap and high carrier mobility. However, the fabrication of germanene-based electronic devices is difficult owing to its chemical instability. To overcome this problem, we proposed and developed a new method of germanene growth at graphene/Ag(111) and hexagonal boron nitride/Ag(111) interfaces. The grown germanene at the interfaces was stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, a vdW interface provides a nanoscale platform for growing germanene similarly to that in vacuum, while this cannot be achieved with a typical oxide interface (Al2O3). We believe that our work is of significantly importance not only for the growth of germanene but also for the fabrication of future germanene-based electronic devices.
著者
観山 正道 大関 真之
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.63, no.3, pp.104-111, 2020-03-10 (Released:2020-03-10)
参考文献数
16

We will review the principles and applications of recently developing quantum annealers represented by D-Wave machines, and discuss the applicability to material materials science.
著者
吉澤 俊介
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.66, no.1, pp.46-51, 2023-01-10 (Released:2023-01-10)
参考文献数
16

Frequent earthquakes in Japan can be problematic for vibration-sensitive measurements. For example, in scanning tunneling microscope (STM) experiments, seismic vibrations cause noises in the data and sometimes lead to a tip crash against the sample surface. The risk of tip crash rises during spectroscopic imaging measurements using STM, where the feedback control is disabled for most of the long measurement time. Here, we have developed a system to prevent tip crashes by retracting the tip in response to the earthquake early warning of the Japan Meteorological Agency. The technique utilizes a built-in function of a commercial STM controller, and an earthquake monitoring service offered by the National Research Institute for Earth Science and Disaster Prevention. We present data to demonstrate how the system works at an earthquake. Our work provides hints for conducting vibration-sensitive measurements in earthquake-prone countries.
著者
野口 亮
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.66, no.10, pp.574-579, 2023-10-10 (Released:2023-10-10)
参考文献数
18

Quasi-one-dimensional materials offer an ideal playground to investigate weak topological insulators (WTIs) and higher-order topological insulators (HOTIs), since their characteristic boundary states emerge in the naturally cleaved surfaces. Utilizing laser-based angle-resolved photoemission spectroscopy (ARPES) and synchrotron-based nano-ARPES, we show evidence of a WTI phase in β-Bi4I4 and a HOTI phase in Bi4Br4.
著者
杉本 敏樹
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.66, no.10, pp.580-586, 2023-10-10 (Released:2023-10-10)
参考文献数
24

Environmentally sustainable and selective conversion of methane to valuable chemicals under ambient conditions is pivotal for the development of next-generation photocatalytic technology. However, the lack of microscopic knowledge on its reaction mechanism prevents the development of engineering strategies for methane photocatalysis. Here we introduce key molecular-level insights into the photocatalytic green utilization of methane. Activation of the robust C–H bond of methane is hardly induced by the direct interaction with photogenerated holes trapped at the surface of photocatalyst ; instead, the C–H activation is significantly promoted by the photoactivated interfacial water species. The interfacial water hydrates and properly stabilizes hydrocarbon radical intermediates, thereby suppressing their overstabilization. Owing to these water-assisted effects, the photocatalytic conversion rates of methane under wet conditions are dramatically improved by typically more than 30 times at ambient temperatures (~300 K) and pressures (~1 atm) in comparison to those under dry conditions.
著者
藤井 一至
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.63, no.4, pp.159-164, 2020-04-10 (Released:2020-04-10)
参考文献数
18

Soil is defined as a mixture of weathering products of rocks (sand, silt, and clay) and humus (or soil organic matter) derived from plant or animal. World soils are divided into 12 groups and their distribution is not uniform. Soil degradation includes soil acidification in humid region, salinization in arid regions, and loss of soil organic matter in both regions. Minimum tillage or optimized fallow systems can minimize loss of soil organic matter and improve soil fertility. Understanding of complex soil system is required for food supply and human survival.
著者
桜井 充
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.61, no.8, pp.522-527, 2018-08-10 (Released:2018-08-10)
参考文献数
2
著者
長谷川 瞬 國貞 雄治 坂口 紀史
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.63, no.8, pp.413-418, 2020-08-10 (Released:2020-08-10)
参考文献数
24
被引用文献数
1

We investigated oxygen reduction reaction (ORR) activity of Pt single atoms and Pt sub-nano clusters (Pt1, Pt2 Pt3) on pristine and various light-element doped graphene using first-principles calculations based on density functional theory. We revealed that ORR activity of these systems shows so-called volcano plot with adsorption energy of an OH which is an ORR intermediate as well as bulk metal catalysts. Additionally, we note that ORR activity of Pt1 is higher than those of Pt2 and Pt3, and a support effect caused by light-elements doped graphene is more clearly observed in the cases of Pt1. Therefore, the combination of Pt1 and proper light-element doped graphene support is a promising candidate for designing a new catalyst that competes with the current fuel cell catalyst ; bulk Pt catalyst.
著者
後藤 隼人
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.63, no.3, pp.129-133, 2020-03-10 (Released:2020-03-10)
参考文献数
17

Recently, we have proposed a new heuristic algorithm for combinatorial optimization inspired by our proposed quantum computer. We named the algorithm “simulated bifurcation (SB) algorithm,” because it is based on the numerical simulation of nonlinear Hamiltonian systems exhibiting bifurcations. Here we present the principle, performance, and applications of our SB machine.
著者
國貞 雄治
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.66, no.10, pp.572-573, 2023-10-10 (Released:2023-10-10)
参考文献数
2

The division of Young Researchers was established in 2018. This division organizes interdisciplinary workshops in a format that facilitates learning for students and young researchers. In this special issue, the recent research achievements have been introduced by young researchers and lecturers at the previous workshop. The presented topics cover angle-resolved photoemission spectroscopy, water molecule networks on solid surfaces, simulation of laser processing of semiconductors, and in situ observation of electrode surfaces by high-speed atomic force electron microscopy. This special issue also contains an article on how to write a scientific paper.
著者
髙橋 隆
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.66, no.10, pp.603-607, 2023-10-10 (Released:2023-10-10)
著者
乙部 智仁
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.66, no.10, pp.587-592, 2023-10-10 (Released:2023-10-10)
参考文献数
15

Recent developments in the simulations of processing of semiconductors and metals by femto- (10-15) second pulse laser, especially silicon and aluminum, are presented. Laser processing is a complex process involving nonlinear phenomena. We have developed microscopic first-principles calculations that describe the light-electron interaction, the semiclassical Vlasov equation that can also include relaxation in metal, and a novel temperature model that allows us to study the entire initial processing process. Each method allows us to analyze the entire process from the moment of laser irradiation to the stage of energy transfer to the lattice. This paper describes the details of the methods and the findings obtained from the results.
著者
磯部 賢治
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.62, no.6, pp.377-379, 2019-06-10 (Released:2019-06-10)
参考文献数
10
著者
佐藤 拓磨
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.66, no.4, pp.247-248, 2023-04-10 (Released:2023-04-10)
参考文献数
2
著者
齊藤 国靖
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.66, no.3, pp.170-175, 2023-03-10 (Released:2023-03-10)
参考文献数
10

We study non-local effects on inhomogeneous flows of soft athermal particles near the jamming transition. We employ molecular dynamics simulations to demonstrate Kolmogorov flows, where a sinusoidal flow profile with fixed wave number is externally imposed, resulting in a spatially inhomogeneous shear rate. We find that the rheology of soft athermal particles is strongly wave number-dependent and particle migration is not sufficient to explain the resulting stress profiles within conventional local constitutive relations. We show that stress profiles can be described by non-local constitutive relations that account for gradients to fourth order.
著者
大平 圭介 中島 寛記 文 昱力 Huynh Thi Cam Tu
出版者
公益社団法人 日本表面真空学会
雑誌
表面と真空 (ISSN:24335835)
巻号頁・発行日
vol.66, no.2, pp.91-96, 2023-02-10 (Released:2023-02-10)
参考文献数
16

Ultrathin (∼1 nm) films have been widely used for high-efficiency crystalline silicon (c-Si) solar cells such as tunnel oxide passivated contact (TOPCon) solar cells. In this article, we present our recent results for the applications of ultrathin silicon oxide (SiOx) and silicon nitride (SiNx) films to c-Si solar cells. The following topics are reviewed. 1) Ultrathin SiNx can be utilized for passivating contacts instead of SiOx in the TOPCon structure. 2) The addition of SiOx between c-Si and thick catalytic-chemical-vapor-deposited (Cat-CVD) SiNx significantly improves the quality of surface passivation. 3) Ultrathin Al-doped SiOx films formed just by dipping in Al(NO3)3 solution on c-Si provide strong upward band bending due to negative fixed charges, which can be used for hole-selective contacts.