著者

庄子 習一 江刺 正喜 松尾 正之

出版者

The Institute of Electronics, Information and Communication Engineers

雑誌

電子情報通信学会論文誌 C (ISSN:03736113)

巻号頁・発行日

vol.J68-C, no.6, pp.475-481, 1985-06-25

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生体計測を目的としたpNa,pK用ISFETの性能を向上させるため,そのイオン感応膜であるM2O-Al2O3-SiO2(MAS,M:アルカリ金属)膜のイオン選択性について研究を行った.MAS膜はpNa,pK用のガラス電極の材料として用いられているものであり,そのイオン選択性はMAS膜の組成に依存することが知られている.そこで,pNa,pK用ISFETのイオン選択性を最大にするため,MAS膜ゲートISFETのMAS膜組成を変化させイオン選択性を測定し,両者の関係を調べた.その結果,MAS膜ゲートISFETのNa+-K+イオン間の選択性はMAS膜のアルカリ金属の種類とアルカリ金属,アルミニウムの含有比の両方に依存することが確められ,pNa,pK用ISFETのイオン感応膜として最適な組成を決定することができた.pNa用のISFETとしてはアルカリ金属としてLiを含むLAS膜をイオン感応膜として用いK+イオンに対するNa+イオン選択性が約200倍で低ドリフト長寿命のものが実現できた.また,pK用ISFETとしてもKを含むKAS膜を用いることにより,Na+イオンに対するK+イオン選択性が約40倍のものが得られた.

著者

松尾 正之 江刺 正喜

出版者

公益社団法人 応用物理学会

雑誌

応用物理 (ISSN:03698009)

巻号頁・発行日

vol.49, no.6, pp.586-593, 1980-06-10 (Released:2009-02-09)

参考文献数

23

被引用文献数

1

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The Ion Sensitive Field-Effect Transistor (ISFET) is a new device for sensing cation activity in the electrolyte. This device is similar to the conventional MOSFET except that the gate insulator is exposed to solution. The gate insulator plays the role of an ion selective electrode and its potential can be detected by its FET action. ISFET's have potential advan-tages over conventional ion selective electrode in their rapid response, small size and low output impedance, and are extremely attractive for biomedical applications. The chemical responses of ISFET's depend on its surface materials. A nearly ideal pH response, excellent stability and selectivity to other cations are obtained using Al203 or Ta2O5. On the other hand, SiO2 shows a poor response and it is proved that the oxygen content in Si3N4 surface degrades its properties as a pH sensor. Sodium-alumino-silicate glass (NAS glass), which is generally known as a material for pNa, pK selective glass electrodes, is utilized as a surface material for the pNa and pK ISFET. The selectivities of these devices are comparable to that of the conventional pNa pK glass electrodes. Some applications of ISFET are also described, that is, micro ion sensor, multi-ion sensor (pH and pNa), combined pH sensor, and pCO2 sensor.

著者

松尾 正之

出版者

The Surface Science Society of Japan

雑誌

表面科学 (ISSN:03885321)

巻号頁・発行日

vol.5, no.Special, pp.273-279, 1984-08-01 (Released:2009-08-07)

参考文献数

16

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An FET sensor is an integrated device of the insulated gate field effect transistor (IGFET) and the chemical sensor and therefore is named as chemically sensitive field effect transistor (CHEMFET). In the CHEMIFET, the gate metal is replaced a more complex structure having chemically sensitive layer. CHEMFETs are new type of chemical sensors and have potential advantages over conventional chemical sensors in miniatuarization, robust solid state nature, mass productivity etc. According to the nature of the interaction between the species to be detected and the chemically sensitive layer, CHEMFETs can be divided into two groups : one that will measure gas concentrations, for example Pd gate FET (H2 gas sensor) and the other that will measure ion concentrations in the solution. The latter called an ion sensitive FET (ISFET). This paper describes the present status of ISFET, that is, its histoical survey, principle, fabrication method and ion selectivities.

著者

松尾 正之 江刺 正喜

出版者

一般社団法人 電気学会

雑誌

電氣學會雜誌 (ISSN:00202878)

巻号頁・発行日

vol.104, no.6, pp.491-494, 1984-06-20 (Released:2008-04-17)

参考文献数

8