著者

田中 崇恵

出版者

京都大学

巻号頁・発行日

2013-03-25

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新制・課程博士

著者

石川 クラウディア Ishikawa Claudia

出版者

名古屋大学留学生センター

雑誌

名古屋大学留学生センター紀要 (ISSN:13486616)

巻号頁・発行日

vol.4, pp.5-26, 2006-10-16 (Released:2011-08-11)

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Japan’s‘Plan to Accept 100,000 Foreign Students’ proved an endeavour of unprecedented dimensions. Prime Minister Yasuhiro Nakasone’s pledge in 1983 to increase the number of foreign students in Japan’s higher education sector tenfold within a span of twenty years not only had serious ramifications for universities, higher education policy, and the MEXT budget. The project was also to prove an immense challenge for the Ministry of Justice Immigration Bureau, with consequences continuing to be felt in education-oriented immigration control policy today. ‘Immigration for study purposes’ is attracting increasing attention amongst student-importing nations. Supported by primary materials, this paper intends to track and interpret developments in the little-explored field of education-seeking immigration in Japan. Analysing changes in the relevant MOJ laws, regulations and notifications, the paper seeks to uncover the impact of foreign student policy on immigration developments and outcomes. Meriting particular attention are the MOJ’s deregulatory drive of the late 1990s, which propelled foreign student numbers to their current levels, and the equally drastic U-turn to a policy of retrenchment in late 2003. Issues raised by the unprecedented influx of foreign students, including the jurisdictional blur between the Immigration Bureau and universities, the growing significance of foreign student labour, and a concern that foreign students may constitute a threat to the order of Japanese society are discussed. The paper concludes by a briefly deliberating on the legacy of the ‘Plan’.

著者

金沢 幾子

出版者

経済資料協議会

雑誌

経済資料研究 (ISSN:03853586)

巻号頁・発行日

vol.21, pp.1-100, 1989-03-30

著者

Ikenaga Mitsuo

出版者

Kyoto University

巻号頁・発行日

1968-01-23

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新制・論文博士

著者

間野 義之

出版者

早稲田大学スポーツ科学学術院

雑誌

スポーツ科学研究

巻号頁・発行日

vol.7, pp.63-67, 2010

著者

松永 光平

出版者

物性研究刊行会

雑誌

物性研究 (ISSN:08272997)

巻号頁・発行日

vol.82, no.3, pp.468-477, 2004-06-20

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この論文は国立情報学研究所の電子図書館事業により電子化されました。

著者

Kato Hiroaki Onda Yuichi Gomi Takashi

出版者

American Geophysical Union

雑誌

Geophysical research letters (ISSN:00948276)

巻号頁・発行日

vol.39, no.20, pp.L20403, 2012-10

被引用文献数

127

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The Fukushima Daiichi nuclear power plant accident resulted in extensive radioactive contamination of the surrounding forests. In this study, we analyzed fallout 137Cs, 134Cs, and 131I in rainwater, throughfall, and stemflow in coniferous forest plantations immediately after the accident. We show selective fractionation of the deposited radionuclides by the forest canopy and contrasting transfer of radiocesium and 131I from the canopy to the forest floor in association with precipitation. More than 60% of the total deposited radiocesium remained in the canopy after 5 month of the initial fallout, while marked penetration of the initially deposited 131I through the canopy was observed. The half-lives of137Cs absorbed in the cypress and cedar canopies were calculated as 620 days and 890 days, respectively for the period of 0–160 days. The transfer of the deposited radiocesium from the canopy to the forest floor was slow compared with that of the spruce forest affected by fallout from the Chernobyl nuclear reactor accident.

著者

黒崎 靖子

出版者

京都大学フランス文学研究室

雑誌

Francia

巻号頁・発行日

vol.9, pp.57-64, 1965-12-28

著者

岸 眞理子

出版者

早稲田商学同攻会

雑誌

早稲田商学=The Waseda commercial review (ISSN:03873404)

巻号頁・発行日

vol.336号, pp.175-192, 1990-02

著者

櫻田 忠衛

出版者

経済資料協議会

雑誌

経済資料研究 (ISSN:03853586)

巻号頁・発行日

vol.17, pp.35-57, 1984-10-15

著者

舘野 太朗

出版者

筑波大学大学院地域研究研究科

雑誌

筑波大学地域研究 (ISSN:09121412)

巻号頁・発行日

no.34, pp.181-202, 2013-03-31

著者

Nemoto Yuya Hino Ken-ichi Maeshima Nobuya

出版者

American Physical Society

雑誌

Physical review B (ISSN:10980121)

巻号頁・発行日

vol.87, no.20, pp.205305, 2013-05

被引用文献数

5

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We examine a continuum effect of a dynamic Wannier-Stark ladder (DWSL) driven by a cw laser—with Fac and ω as amplitude and frequency, respectively—by means of an excess density of states (DOS), ρ(ex)(E), closely related to the more familiar DOS and proportional to the lifetime of a resonance state. It is mathematically shown that ρ(ex)(E) is governed by three different physical mechanisms: the single-channel resonance mechanism, the multichannel nonresonance mechanism, and the multichannel resonance mechanism. The last mechanism becomes more important with the increase in Fac. The effect of the interchannel interaction is maximized when the ratio of a Bloch frequency to ω, represented as η, equals unity. In the actual calculations based on the R-matrix Floquet theory, it is revealed that, in a large-Fac region, ρ(ex)(E) for η=1 shows a complicated spectral structure composed of a couple of newly growing peaks, in contrast to ρ(ex)(E) for η=3 which just shows a monotonic change of a single spectral peak. It is speculated that the pronounced feature of the former spectra is attributed to the Fano-like multichannel resonance mechanism, whereas the feature of the latter case is attributed to the multichannel nonresonance mechanism.

著者

Toko Kaoru Fukata Naoki Nakazawa Koki Kurosawa Masashi Usami Noritaka Miyao Masanobu Suemasu Takashi

出版者

Elsevier B.V.

雑誌

Journal of crystal growth (ISSN:00220248)

巻号頁・発行日

vol.372, pp.189-192, 2013-06

被引用文献数

15 4

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High-quality crystalline Ge thin films on low-cost glass substrates are desired to reduce the fabrication cost of high-efficiency tandem solar cells. We applied an Al-induced crystallization technique to amorphous-Ge films (50-nm thickness) on SiO2 glass substrates. The annealing temperature of the sample strongly influenced the grain size and the crystal orientation in the grown polycrystalline Ge layers: low annealing temperatures resulted in large grains and high (111)-orientation fractions. As a result, annealing at 325 °C provided 98% (111)-oriented grains with average diameters of 30 μm. Moreover, the grown Ge layers could be used as an epitaxial template for chemical vapor deposition. This large-grained Ge film on a SiO2 substrate appears promising for use as a Ge light-absorbing layer, as well as an epitaxial buffer layer for group III–V compound semiconductors.

著者

岩永 青史

巻号頁・発行日

2012

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筑波大学博士 (農学) 学位論文・平成24年5月31日授与 (甲第6284号)

著者

杉田 歩

出版者

京都大学数理解析研究所

雑誌

数理解析研究所講究録 (ISSN:18802818)

巻号頁・発行日

vol.1507, pp.147-159, 2006-07

著者

安部 亜由美

出版者

京都大学大学院文学研究科国語学国文学研究室

雑誌

京都大学國文學論叢 (ISSN:13451723)

巻号頁・発行日

vol.16, pp.17-29, 2006-09-30

著者

杉原 四郎

出版者

経済資料協議会

雑誌

経済資料研究 (ISSN:03853586)

巻号頁・発行日

vol.1, pp.6-16, 1969-03-15

著者

鈴木 輝夫

巻号頁・発行日

2013

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筑波大学博士 (工学) 学位論文・平成25年3月25日授与 (甲第6417号)

著者

AKAHIRA Masafumi

出版者

電気通信大学

雑誌

Reports of the University of Electro-Communications (ISSN:04934253)

巻号頁・発行日

vol.26, no.1, pp.143-149, 1975-08

著者

麻見 直美 角谷 雄哉

出版者

筑波大学体育系

雑誌

筑波大学体育系紀要

巻号頁・発行日

vol.36, pp.177-178, 2013-03